Zobrazeno 1 - 10
of 38
pro vyhledávání: '"M. C. Thornton"'
Publikováno v:
Applied Surface Science. :115-119
The (111)B surface of GaAs has been investigated using scanning tunnelling microscopy (STM) and a number of different reconstructions have been found at different surface stoichiometries. In accordance with electron diffraction studies, we find the s
Publikováno v:
Journal of Physics D: Applied Physics. 30:2783-2787
We have investigated ordering at the (110) surface of using scanning tunnelling microscopy (STM) and reflectance anisotropy spectroscopy (RAS). The surface is found to adopt the L structure of , with double atomic height steps and the exclusive exist
Publikováno v:
Surface Science. 380:548-555
The (111)B surface of GaAs has been investigated using scanning tunneling microscopy (STM) and a number of different reconstructions have been found at different surface stoichiometries. In accordance with electron diffraction studies, we find the se
Publikováno v:
Surface Science. :233-237
The results of a photoelectron spectroscopy study of the K/GaP(110)interface grown at T = 120 K are presented for the first time. The analysis shows a big core level shift at lower binding energies (ΔE = 1.6 eV at a coverage Θ = 0.1 L) for the P 2p
Publikováno v:
Transactions of the IMF. 75:165-170
SummaryThe resistance spot weldability of AA5754 (Al. 3.0 Mg) has been tested with three characteristic surface conditions, etched, mill finish and pretreated/lubricated sheet combined with the presence of a structural adhesive (weld bonding). Each s
Publikováno v:
Applied Surface Science. :631-636
Thin sheets of dopant atoms (δ-layers) have been shown to give unprecedented microscopic control over interfaces between semiconductors, though there exists very little understanding of the fundamental changes in the electronic structure in the vici
Publikováno v:
Applied Surface Science. :234-239
The alkali-metal/III–V semiconductor interface is a model system with which to study overlayer metallization and Schottky barrier development. Until now, typically the cleaved (110) surfaces of the semiconductor have been utilized in this respect,
Publikováno v:
Surface Science. :724-729
The (2 × 4) reconstruction of the (001) surface of GaAs has been studied using scanning tunnelling microscopy (STM) and spectroscopy. The images, produced at several biases, show coexisting two dimer and three dimer surface unit cell reconstructions
Autor:
Sergio D'Addato, Peter Weightman, J. M. C. Thornton, N. J. Brooks, Lamberto Duò, P. Unsworth, Massimo Sancrotti
Publikováno v:
Journal of Physics: Condensed Matter. 8:1413-1419
We present the results of a valence band (VB) photoemission study of a alloy in a photon energy range covering the Cooper minima of the Pd 4d and Au 5d photoionization cross sections, ( = 90 - 280 eV). The spectra show the presence of the Pd 4d-deriv
Publikováno v:
Materials Science and Engineering: B. 35:489-492
We have generated scanning tunneling microscopy images of the reconstructed GaAs(001) surface using an ab initio pseudopotential method and the Bardeen tansfer Hamiltonian approximation. These images are compared with observed images for different bi