Zobrazeno 1 - 9
of 9
pro vyhledávání: '"M. C. Reuter"'
Autor:
C. Bausewein, F. Hodiamont, N. Berges, A. Ullrich, C. Gerlach, K. Oechsle, B. Pauli, J. Weber, S. Stiel, N. Schneider, N. Krumm, R. Rolke, C. Gebel, M. Jansky, F. Nauck, U. Wedding, B. van Oorschot, C. Roch, L. Werner, M. Fischer, M. Schallenburger, M. C. Reuters, J. Schwartz, M. Neukirchen, A. Gülay, K. Maus, B. Jaspers, L. Radbruch, M. Heckel, I. Klinger, C. Ostgathe, U. Kriesen, C. Junghanß, E. Lehmann, D. Gesell, S. Gauder, C. Boehlke, G. Becker, A. Pralong, J. Strupp, C. Leisse, K. Schloesser, R. Voltz, N. Jung, S. T. Simon, for the PallPan Study Group
Publikováno v:
BMC Palliative Care, Vol 21, Iss 1, Pp 1-9 (2022)
Abstract Background In the SARS-CoV-2 pandemic, general and specialist Palliative Care (PC) plays an essential role in health care, contributing to symptom control, psycho-social support, and providing support in complex decision making. Numbers of C
Externí odkaz:
https://doaj.org/article/d4b7b5093413449c8840642999ca1bc7
Publikováno v:
Journal of Crystal Growth. 173:393-401
High-temperature epitaxy of PtSi/Si(0 0 1) interfaces has been investigated by ultra-high-vacuum transmission electron microscopy for deposition temperatures up to 850°C. At 600°C continuous, polycrystalline, epitaxial films are observed with recta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83c9bfa8ea9003bbf62d35a4f41cc988
https://doi.org/10.1016/s0022-0248(96)01047-0
https://doi.org/10.1016/s0022-0248(96)01047-0
Publikováno v:
Applied Physics Letters. 85:458-460
We report medium energy ion scattering results that determine the extent of Hf incorporation in the interfacial region of HfO2∕Si(001) films. The lack of change in the Hf backscatter peak after interlayer growth by in situ oxidation indicates extre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe9a77ed3ae809e1dc2d7648dc0ef830
https://doi.org/10.1063/1.1773365
https://doi.org/10.1063/1.1773365
Autor:
M. Copel, M. C. Reuter
Publikováno v:
Applied Physics Letters. 83:3398-3400
Growth of HfO2 by Hf deposition in an oxidizing ambient is found to cause removal of interfacial SiO2. Medium-energy ion scattering results show that the reaction takes place during growth, and involves transport of oxygen through the HfO2 layer. An
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50fdc507dc1e22f92e4b9ac6eb94076b
https://doi.org/10.1063/1.1621734
https://doi.org/10.1063/1.1621734
Publikováno v:
Applied Physics Letters. 65:1680-1682
We have used low‐energy electron microscopy to investigate the growth of Ge on GaAs(001)‐c(2×8). Depending on the growth temperature we find a wide variety of growth modes: At 420 °C growth proceeds layer by layer, with nucleation of two‐dime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8910944e8cd0de6fd7d81d9df06b58d
https://doi.org/10.1063/1.112884
https://doi.org/10.1063/1.112884
Autor:
Rudolf M. Tromp, M. C. Reuter, Karen L. Kavanagh, Ken M. Ring, R. S. Williams, Brent A. Morgan, A. Alec Talin
Publikováno v:
MRS Proceedings. 402
Recent work using ballistic electron emission microscopy (BEEM) and ultra-high vacuum transmission electron microscopy (UHV-TEM) to study structure-property correlations of PtSi/Si(001) contacts is described. The spatial uniformity of the Schottky ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ff4a7106bc8ec62d49c68237681b7bd
https://doi.org/10.1557/proc-402-461
https://doi.org/10.1557/proc-402-461
Autor:
M. C. Reuter, Rudolf M. Tromp
Publikováno v:
MRS Proceedings. 237
We have designed and built a Low Energy Electron Microscope for surface and interface studies in Ultra High Vacuum. In this paper we present major features of the design, and some of our results on surfactant mediated Ge growth on Si(001).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21865dff679d7c96fd21d83305efb610
https://doi.org/10.1557/proc-237-349
https://doi.org/10.1557/proc-237-349
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 7:1910-1913
The structure of the Si(111)–CaF2 interface has been determined with medium‐energy ion scattering and high‐resolution transmission electron microscopy. The interface structure is closely related to the bulk crystal structure of CaSi2. The inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9005815d84e14f20009220cb277231c0
https://doi.org/10.1116/1.576027
https://doi.org/10.1116/1.576027
Autor:
M. C. Reuter, R. M. Tromp
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 6:2575-2576
We describe a ball bushing assembly which supports a cylindrical mirror analyzer allowing it to be translated 5.5 in. by a linear motion feedthrough. The assembly mounts on an 8‐in. flange and avoids the use of bellows.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb0f74bb1fc66f4f7aa005b38f87e2ab
https://doi.org/10.1116/1.575553
https://doi.org/10.1116/1.575553