Zobrazeno 1 - 10
of 275
pro vyhledávání: '"M. C. Ohmer"'
Autor:
Nils C. Fernelius, Svetlana A. Bereznaja, Valeriy G. Voevodin, M. C. Ohmer, Z. V. Korotchenko, Jonathan T. Goldstein, Olga V. Voevodina
Publikováno v:
Journal of Physics and Chemistry of Solids. 64:1755-1760
Research in doping processes of ternary chalcopyrites A 2 B 4 C 2 5 is of primary interest for several reasons. First of all, a study of the dependencies of ‘the properties of crystal vs. the concentration of impurity in melt’ decides a fundament
Autor:
Jonathan T. Goldstein, K.-T. Chen, Steven H. Morgan, Ying-Fang Chen, M. C. Ohmer, Arnold Burger, S. M. Hegde, Ravindra Pandey
Publikováno v:
Journal of Electronic Materials. 32:783-788
We report here a comparison between two methods for calculating the index of refraction of the CdSxSe1−x alloy system and a calculation of the phase-matching angles for second harmonic generation for this system. Analytical expressions for the inde
Autor:
Scott D. Setzler, M. C. Ohmer, Thomas M. Pollak, Peter G. Schunemann, David E. Zelmon, Jonathan T. Goldstein
Publikováno v:
Journal of Crystal Growth. 211:242-246
Large, crack-free single crystals of AgGaTe 2 were grown for the first time using the horizontal gradient freeze technique. As-grown samples were transparent from 1.2 μm to beyond 16 μm (the spectrometer limit): they exhibited near-theoretical tran
Autor:
K. T. Stevens, M. C. Ohmer, Scott D. Setzler, Thomas M. Pollak, Larry E. Halliburton, Frank Kenneth Hopkins, Peter G. Schunemann, Nancy C. Giles, Jonathan T. Goldstein
Publikováno v:
Journal of Applied Physics. 86:6677-6681
A broad optical absorption band with a peak near 1 μm is present in most single crystals of ZnGeP2. These same crystals have an electron paramagnetic resonance (EPR) signal which has been assigned to singly ionized zinc vacancies. A direct correlati
Autor:
David E. Zelmon, M. C. Ohmer, Adam William Saxler, Peter G. Schunemann, S. M. Hegde, Jonathan T. Goldstein, Thomas M. Pollak, J. D. Wolf
Publikováno v:
Journal of Applied Physics. 86:94-99
The fundamental optical properties of AgGaTe2, a nonlinear optical semiconductor are reported. These properties include birefringence, indices of refraction, infrared transmission, and the temperature dependence of the band gap. The average index for
Publikováno v:
Journal of Physics: Condensed Matter. 11:4517-4526
Structural, thermodynamic and electronic properties of CdGeAs2 with chalcopyrite structure are investigated in the framework of density functional theory. We employ the linear combination of atomic orbitals method with the Gaussian basis sets and pre
Autor:
M. C. Ohmer, Ravindra Pandey
Publikováno v:
MRS Bulletin. 23:16-22
Chalcopyrite nonlinear optical (NLO) semiconductors are presently enjoying a major renaissance. This rebirth of interest is due primarily to the success of recent materials research-and-development (R&D) programs that have dramatically improved the a
Publikováno v:
Journal of Physics: Condensed Matter. 10:5525-5533
Native acceptor centres in are studied using atomistic simulation techniques for which a new set of interatomic potential parameters consisting of two- and three-body terms is developed. Crystal lattice constants, elastic and low- and high-frequency
Autor:
M. C. Ohmer, Gert Irmer, I. K. Polushina, Peter G. Schunemann, J. Monecke, B. Kh. Bairamov, V. Yu. Rud, Yu. V. Rud, Nils C. Fernelius
Publikováno v:
Physics of the Solid State. 40:190-194
Spectra of inelastic light scattering by optical phonons in p-CdGeAs2 single crystals were obtained for the first time. The observed clear polarization dependence and the absence of any appreciable dependence of the intensity and frequency of the obs
Publikováno v:
Journal of Applied Physics. 81:3579-3585
We have directly measured the birefringence Δn of CdGeAs2 using polarized light interference spectra obtained in transmittance from 2.4 to 18 μm over a temperature range of 14–450 K. Four different samples, exhibiting a wide range of free carrier