Zobrazeno 1 - 10
of 14
pro vyhledávání: '"M. C. Luche"'
Autor:
M. C. Luche, J. Guillan, Sonarith Chhun, P. Normandon, E. Petitprez, Lucile Arnaud, K. Haxaire, E. Richard, C. Monget, D. Galpin
Publikováno v:
Microelectronic Engineering. 88:697-700
Two seed deposition hardware are compared in this paper: a standard Self Ionized Plasma (SIP) standard chamber and a new generation chamber allowing Cu deposition and re-sputtering simultaneously. TEM characterizations exhibits better features covera
Publikováno v:
2009 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
For mature technologies, main yield detractor is random defectivity. Nevertheless, some devices present higher defectivity than rest of devices. Out of process accident, design related defect is one of suspected root cause. Also, design-based defect
Autor:
Vikram, Abhishek1 (AUTHOR) abvikram@ieee.org, Agarwal, Vineeta1 (AUTHOR) vineeta@mnnit.ac.in, Agarwal, Anshul2 (AUTHOR) anshul@nitdelhi.ac.in
Publikováno v:
IETE Journal of Research. Sep-Oct2020, Vol. 66 Issue 5, p677-684. 8p.
Autor:
Vikram, Abhishek1, Agarwal, Vineeta1 vineeta@mnnit.ac.in
Publikováno v:
Semiconductors. Dec2017, Vol. 51 Issue 12, p1661-1665. 5p.
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Autor:
Seunghoe Choe, Myung Jun Kim, Hoe Chul Kim, Taeho Lim, Kyung Ju Park, Sung Ki Cho, Soo-Kil Kim, Jae Jeong Kim
Publikováno v:
Journal of The Electrochemical Society; 2013, Vol. 160 Issue 4, pD202-D205, 4p
Autor:
Fukuda, Akira, Kodera, Akira, Toma, Yasushi, Suzuki, Tsukuru, Hiyama, Hirokuni, Doi, Toshiro, Kurokawa, Syuhei, Ohnishi, Osamu
Publikováno v:
Japanese Journal of Applied Physics; Jul2010, Vol. 49 Issue 7R, p1-1, 1p
Publikováno v:
Japanese Journal of Applied Physics; Jun2009, Vol. 48 Issue 6R, p1-1, 1p
Publikováno v:
Journal of Physics: Condensed Matter; 4/17/2000, Vol. 12 Issue 15, p1-1, 1p
Autor:
Wai Shing Lau
The main focus of this book is ULSI front-end technology. It covers from the early history of semiconductor science & technology from 1874 to state-of-the-art FINFET technology in 2016. Some ULSI back-end technology is also covered, for example, the