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Super band‐gap time‐resolved luminescence study of degenerate electron–hole plasma in thin GaAs epilayers

Autor: Boris D. Fainberg, Yossi Rosenwaks, E. Poles, S.Y. Goldberg, M. C. Hanna, Dan Huppert

Publikováno v: Journal of Applied Physics. 80:5129-5137

Super band‐gap time‐resolved photoluminescence is employed to measure the transport properties of degenerate electron–hole gas in thin GaAs epilayers. It is found that the luminescence decay at wavelengths shorter then the energy gap wavelength

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::549e420bb63ec3fec4da53729e7fec49
https://doi.org/10.1063/1.363494

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The effects of carrier transport on the photoluminescence of degenerate electron-hole plasma in GaAs epilayers

Autor: S.Y. Goldberg, Dan Huppert, Yossi Rosenwaks, M. C. Hanna, E. Poles, Boris D. Fainberg

Publikováno v: Applied Surface Science. 106:457-465

Time resolved photoluminescence (TRPL) is employed to study photogenerated electron-hole plasma expansion under strong illumination conditions in thin GaAs epilayer. We have observed spectral dependencies similar to ones which are usually observed on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::37e26ce7cb6612448ca05409c4bc20cb
https://doi.org/10.1016/s0169-4332(96)00413-8

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Properties of the deep donor states of AlxGa1−xAs:Se

Autor: A. Majerfeld, Zheng-Hong Lu, E. G. Oh, D. M. Szmyd, M. C. Hanna

Publikováno v: Journal of Applied Physics. 74:1057-1071

A study of the electrical and optical properties of the Se deep donor states in AlxGa1−xAs:Se grown by metalorganic vapor phase epitaxy (MOVPE) process is reported. A novel experimental technique is presented to determine the absolute energy and th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::70bffccbb61bc050fb6f18799bc1e6c1
https://doi.org/10.1063/1.354953

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Composition dependence of Raman intensity of the nitrogen localized vibrational mode in GaAs1−xNx

Autor: Angelo Mascarenhas, Maeng-Je Seong, M. C. Hanna

Publikováno v: Applied Physics Letters. 79:3974-3976

We have investigated the nitrogen-localized vibrational mode (LVM) Raman intensity and its frequency (ωLVM) as a function of nitrogen concentration in GaAs1−xNx (x⩽0.04) at 300 K. The normalized Raman intensity of nitrogen LVM with respect to th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b4b512cdd6735448830a1925e03257eb
https://doi.org/10.1063/1.1424469

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