Zobrazeno 1 - 2
of 2
pro vyhledávání: '"M. C. Gilmer"'
Autor:
G. Williamson, P. Lysaght, Peter Zeitzoff, Billy Nguyen, S. Kim, Kenneth Torres, V.H.C. Watt, J. A. Fair, G. Gale, M.D. Jackson, M. C. Gilmer, T. Y. Luo, George A. Brown, Carolyn F. H. Gondran, M. T. Schulberg, T. Tamagawa, Gennadi Bersuker, R. Amos, Howard R. Huff, D. Brady, Franz T. Geyling, J. Guan, L. Vishnubhotla
Publikováno v:
MRS Proceedings. 567
A design-of-experiments methodology was implemented to assess the commercial equipment viability to fabricate the high-K dielectrics Ta2O5, TiO2 and BST (70/30 and 50/50 compositions) for use as gate dielectrics. The high-K dielectrics were annealed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e0a21e1ee9f5cd28e4f9fbe0838ad4d
https://doi.org/10.1557/proc-567-323
https://doi.org/10.1557/proc-567-323
Autor:
Howard R. Huff, F. Shaapur, Kenneth Torres, Alain C. Diebold, A. Karamcheti, Peter Zeitzoff, X. Guo, L. Vishnubhotla, V.H.C. Watt, Gennadi Bersuker, T. Tamagawa, J. Guan, Xiaomu Wang, D. Brady, M.D. Jackson, George A. Brown, T. Y. Luo, Tso-Ping Ma, M. C. Gilmer, G. Gale
Publikováno v:
MRS Proceedings. 592
This paper describes the electrical and physical characteristics of ultrathin Jet Vapor Deposited (JVD) Silicon Oxynitride films. Capacitance-Voltage measurements indicate an equivalent oxide thickness (EOT) of less than 2 nm, taking into account the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::022a80a5bdcaebde1885916b3f31a4d8
https://doi.org/10.1557/proc-592-307
https://doi.org/10.1557/proc-592-307