Zobrazeno 1 - 10
of 10
pro vyhledávání: '"M. C. Gaidis"'
Autor:
Christopher Wilson, Andrew E. Szymkowiak, Richard E. Lathrop, Daniel E. Prober, Samuel H. Moseley, Kenneth Segall, Liang Li, M. C. Gaidis, A.K. Davies
Publikováno v:
IEEE Transactions on Appiled Superconductivity. 9:3326-3329
We have developed superconducting, single-photon imaging X-ray detectors with an energy resolution of 26 eV FWHM at 6 keV and a spatial resolution of 0.5 /spl mu/m over an effective area of 18 /spl mu/m/spl times/100 /spl mu/m. The energy resolution
Autor:
Christopher Wilson, M. C. Gaidis, Kenneth Segall, S. Friedrich, Daniel E. Prober, Luigi Frunzio, L. Li, Andrew E. Szymkowiak, Samuel H. Moseley
Publikováno v:
Applied Physics Letters. 76:3998-4000
We present a theory and measurements of noise mechanisms in superconducting tunnel-junction detectors used as single-photon spectrometers. These mechanisms result from incomplete cooling of the excited quasiparticles in the tunnel-junction electrode.
Publikováno v:
Solid-State Electronics. 33:1089-1096
We investigated the effects of P + co-implantation, implantation temperature and type of post-implantation anneal on the hole concentration distributions in semi-insulating (100) InP:Fe wafers implanted with 5×10 13 and 5×10 14 cm −2 Zn + ions. A
Autor:
William R. McGrath, B. Bumble, Peter Burke, Daniel E. Prober, Henry G. LeDuc, M. C. Gaidis, Robert Schoelkopf, Anders Skalare, Boris S. Karasik
Publikováno v:
Applied Physics Letters. 72:1516-1518
A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermedia
Autor:
Liang Li, Luigi Frunzio, Kenneth Segall, S. Friedrich, M. C. Gaidis, Christopher Wilson, Daniel E. Prober
Publikováno v:
70 (2004): 214520.
info:cnr-pdr/source/autori:K. Segall, C.M. Wilson, L. Li, L. Frunzio, S. Friedrich, M.C. Gaidis, D.E. Prober/titolo:Dynamics and energy distribution of non-equilibrium quasiparticles in superconducting tunnel junctions/doi:/rivista:/anno:2004/pagina_da:214520/pagina_a:/intervallo_pagine:214520/volume:70
info:cnr-pdr/source/autori:K. Segall, C.M. Wilson, L. Li, L. Frunzio, S. Friedrich, M.C. Gaidis, D.E. Prober/titolo:Dynamics and energy distribution of non-equilibrium quasiparticles in superconducting tunnel junctions/doi:/rivista:/anno:2004/pagina_da:214520/pagina_a:/intervallo_pagine:214520/volume:70
We present a full theoretical and experimental study of the dynamics and energy distribution of non-equilibrium quasiparticles in superconducting tunnel junctions (STJs). STJs are often used for single-photon spectrometers, where the numbers of quasi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37e3aa36b394af306fdc5acfa6a4fd65
https://publications.cnr.it/doc/19036
https://publications.cnr.it/doc/19036
Publikováno v:
SPIE Proceedings.
We describe progress in the development of a calibration target for use in the EOS-MLS 2.5 THz radiometer on NASA's CHEM-1 spacecraft. Although the intended use is as a stable, isothermal black body load at a frequency of 2.5 THz, the design is suita
Autor:
Peter Burke, Boris S. Karasik, Bruce Bumble, Daniel E. Prober, Anders Skalare, Henry G. LeDuc, Robert Schoelkopf, William R. McGrath, M. C. Gaidis
Publikováno v:
SPIE Proceedings.
We report on the development of quasioptical Nb hot-electron bolometer mixers for heterodyne receivers operating at 1 THz 3 THz. The devices have submicron in-plane sizes, thus exploiting diffusion as the electron cooling mechanism. Quasioptical mixe
Autor:
E. J. O'Sullivan, M. J. Gajek, J. J. Nowak, S. L. Brown, M. C. Gaidis, G. Hu, J. Z. Sun, P. L. Trouilloud, D. W. Abraham, R. P. Robertazzi, W. J. Gallagher, D. C. Worledge
Publikováno v:
ECS Meeting Abstracts. :2018-2018
not Available.
Publikováno v:
Applied Physics Letters. 51:186-188
An enhanced‐overpressure capless annealing technique suitable for annealing ion‐implanted InP at temperatures of 900 °C is described. The technique utilizes a Sn‐coated InP wafer and is based on the same principle as the In‐Sn‐P liquid‐s
Autor:
Joseph P. Donnelly, Chun Wang, W. D. Goodhue, J. D. Woodhouse, K. K. Anderson, M. C. Gaidis, D. Yap
Publikováno v:
MRS Proceedings. 144
Ion-beam-assisted etching of GaAs/AlGaAs and InP/GaInAsP, ion-beam disordering of GaAs/AlGaAs multiple-quantum-well structures, and ion implantation in InP are discussed.