Zobrazeno 1 - 10
of 17
pro vyhledávání: '"M. C. Finn"'
Publikováno v:
Scopus-Elsevier
A new organometallic source, tritertiarybutylaluminum (TTBAl), has been used in growth of AlxGa1−xSb epilayers by low pressure organometallic vapor phase epitaxy. Ternary alloys were grown over the whole composition range 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3ce14196f1c1884fbdb2849bfc08474
https://doi.org/10.1063/1.115541
https://doi.org/10.1063/1.115541
Publikováno v:
Applied Physics Letters. 56:420-422
Monolithically integrated reduced‐confinement antennas are shown to produce reductions of >35% in the far‐field beam divergence for radiation emitted from single‐mode GaAlAs slab waveguides, yielding far‐field beams as narrow as 8.2° FWHM al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e5ff6c5bc21f34712f1c61439fbd29f
https://doi.org/10.1063/1.102776
https://doi.org/10.1063/1.102776
Publikováno v:
Integrated Photonics Research.
Tapered-waveguide antennas reduce the far-field divergence of beams emitted from integrated-optical waveguides. Previously, we presented preliminary results on reduced-confinement GaAlAs antennas,1 which, unlike horn antennas, are compatible with two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6b13a72d0ec78e8897fc9459227054e
https://doi.org/10.1364/ipr.1990.mi3
https://doi.org/10.1364/ipr.1990.mi3
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:349
A reduced‐confinement GaAlAs tapered‐waveguide antenna has been demonstrated. This device, produced by means of a novel growth technique using molecular‐beam epitaxy, employs a longitudinal variation in the refractive index and thickness of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42f2bd7f040d90c2b21f3e19b966e7c6
https://doi.org/10.1116/1.585068
https://doi.org/10.1116/1.585068
Publikováno v:
Journal of Burn Care & Rehabilitation. 8:126-131
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b82c7136606f365bc9f245c43d9cb662
https://doi.org/10.1097/00004630-198703000-00008
https://doi.org/10.1097/00004630-198703000-00008
Publikováno v:
Journal of Applied Physics. 45:5383-5388
By using the same GaAs–Ga1−xAlxAs heterostructure material to make both optically excited and junction lasers we have compared the performance of the two classes of lasers under pulsed room‐temperature operation. We find that junction lasers ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c29e28339798c26ef519b245c8758d9
https://doi.org/10.1063/1.1663248
https://doi.org/10.1063/1.1663248
Publikováno v:
Journal of Biological Chemistry. 264:16892-16896
Previously, we isolated several inhibitors that block the site-specific recombination reaction mediated by the Tn3-encoded resolvase protein. One class of inhibitors blocks resolvase binding to the recombination (res) sitc, and a second class inhibit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d30c6b410d941086c1f3d2a0bec251e6
https://doi.org/10.1016/s0021-9258(19)84791-9
https://doi.org/10.1016/s0021-9258(19)84791-9
Publikováno v:
Applied Physics Letters. 55:2438-2440
Superconducting Y‐Ba‐Cu‐O (YBCO) films have been prepared by ex situ O2 annealing of multilayer films deposited on yttria‐stabilized zirconia substrates by sequential rf diode sputtering of Y2O3, BaF2, and CuO targets, all of which are chemic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7889b43da5912c20a1abe723856d8699
https://doi.org/10.1063/1.102294
https://doi.org/10.1063/1.102294
Publikováno v:
Applied Physics Letters. 54:310-312
The infrared absorption of Ir and IrSi thin films on Si substrates has been determined by transmission and reflection measurements over the wavelength range 2.5–25 μm. Detailed analysis of the dependence of absorption at 4 μm on film thickness in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32608d742743acf0e6465d636a01bbbc
https://doi.org/10.1063/1.100995
https://doi.org/10.1063/1.100995
Publikováno v:
Applied Physics Letters. 48:535-537
We have fabricated Pd/Ge/Au and Ge/Pd/Au sintered ohmic contacts on n‐type GaAs. These contacts have specific resistances similar to those of conventional Ni/Ge/Au alloyed ohmic contacts, but their surfaces are much smoother and their edges are wel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efdd5ef5768b369b4bf4609a840b447a
https://doi.org/10.1063/1.96498
https://doi.org/10.1063/1.96498