Zobrazeno 1 - 10
of 816
pro vyhledávání: '"M. C. Amann"'
Autor:
Frederic Demmerle, Jochen Bissinger, Wolfhard Oberhausen, Dominik Burghart, Jonas Krakofsky, Hannes Schmeiduch, Gerhard Boehm, M.-C. Amann
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 3, Pp 1-9 (2017)
We present a single stack active region design for terahertz emission by difference frequency generation in quantum cascade lasers. The active region contains a single design, which is based on multiple optical transitions within one period. This res
Externí odkaz:
https://doaj.org/article/5a8ce514f99e45acb761362e9336337c
Publikováno v:
AIP Advances, Vol 7, Iss 2, Pp 025208-025208-11 (2017)
Self-heating in semiconductor lasers is often assumed negligible during pulsed operation, provided the pulses are ‘short’. However, there is no consensus on the upper limit of pulse width for a given device to avoid-self heating. In this paper,
Externí odkaz:
https://doaj.org/article/4a83a18d65fb48bcb14d4c9cc26b2541
Autor:
M.-C. Amann, Hannes Schmeiduch, Gerhard Boehm, Jochen Bissinger, Wolfhard Oberhausen, Dominik Burghart, Frederic Demmerle, Jonas Krakofsky
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 3, Pp 1-9 (2017)
We present a single stack active region design for terahertz emission by difference frequency generation in quantum cascade lasers. The active region contains a single design, which is based on multiple optical transitions within one period. This res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c80fcc242238eb78e869cf5499d13a7
https://ieeexplore.ieee.org/document/7933955/
https://ieeexplore.ieee.org/document/7933955/
Autor:
Kristijonas Vizbaras, Alexander Andrejew, M.-C. Amann, Stephen J. Sweeney, Alf R. Adams, Barnabas A. Ikyo, Gregory Belenky, Jerry R. Meyer, Igor P. Marko, Leon Shterengas, Timothy D. Eales, Igor Vurgaftman
Publikováno v:
2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
Type-I quantum well (QW) lasers based on the GaSb material system show attractive characteristics in the mid-infrared [1]. However, as the wavelength (λ) increases in the range of 2–4 μm their performance begins to deteriorate due to increasing A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5080e9bd19e502e345bfbd891eafe60
https://doi.org/10.1109/cleoe-eqec.2019.8872666
https://doi.org/10.1109/cleoe-eqec.2019.8872666
Autor:
A. Laucht, S. Pütz, T. Günthner, N. Hauke, R. Saive, S. Frédérick, M. Bichler, M.-C. Amann, A. W. Holleitner, M. Kaniber, J. J. Finley
Publikováno v:
Physical Review X, Vol 2, Iss 1, p 011014 (2012)
We investigate single-photon generation from individual self-assembled InGaAs quantum dots coupled to the guided optical mode of a GaAs photonic crystal waveguide. By performing confocal microscopy measurements on single dots positioned within the wa
Externí odkaz:
https://doaj.org/article/67b851c0313f427b885ca7f4ac8c120a
Autor:
Stephen J. Sweeney, Kristijonas Vizbaras, Alexander Andrejew, M.-C. Amann, Alf R. Adams, Barnabas A. Ikyo, Timothy D. Eales, Leon Shterengas, Igor P. Marko
Publikováno v:
2018 IEEE International Semiconductor Laser Conference (ISLC).
To determine whether an activated or thresholdless Auger process dominants in mid-infrared lasers we investigated their variation with temperature and high-pressure. We found that below 2 μm the CHSH process dominates. Above 2 μm an activated CHCC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f6da5719b98c1790cd723dc492d7cef
https://doi.org/10.1109/islc.2018.8516247
https://doi.org/10.1109/islc.2018.8516247
Publikováno v:
Smart Photonic and Optoelectronic Integrated Circuits XX.
We demonstrate the extension of the wavelength range of InP- and GaSb-based buried tunnel junction VCSELs using type-II quantum wells. The InP-based devices emit at 2.5 μm and operate in continuous-wave (CW) up to 20°C, with a maximum single-mode o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b5fc69b5c6823239170ac6add05b11e
https://doi.org/10.1117/12.2286325
https://doi.org/10.1117/12.2286325
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::740308730a3f253a96352738f08f3b26
https://doi.org/10.1201/9781351074636-34
https://doi.org/10.1201/9781351074636-34
Publikováno v:
Journal of Lightwave Technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=r3c4b2081b22::9e68eefe70651d89c2efee4fd5fa995f
Publikováno v:
2017 IEEE Photonics Conference (IPC).
GaSb-based electrically-pumped vertical-cavity surface-emitting lasers at 3.93 μm, using type-II quantum wells are analyzed. Current broadening due to radial diffusion of carriers in the active region is estimated to be 4.2 μm and this is determine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0656adb7c0c02622f1a74f47f4fda88
https://doi.org/10.1109/ipcon.2017.8116083
https://doi.org/10.1109/ipcon.2017.8116083