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pro vyhledávání: '"M. Bullough"'
Akademický článek
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Publikováno v:
Journal of Instrumentation. 17:P05030
High-density compound semiconductors with sufficiently-high photon attenuations, such as CdZnTe, are required for the detection of the high-energy X-rays (>20 keV), typical to applications of the HEXITEC ASIC. However, in low-energy applications (2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d83a2a770d9d09192a9965efbe3cbd97
https://doi.org/10.1088/1748-0221/17/05/p05030
https://doi.org/10.1088/1748-0221/17/05/p05030
Autor:
J. T. Link, D. J. McComas, A. W. Labrador, K. Richardson, C. S. Tindall, B. Kecman, C. M. S. Cohen, N. Clarke, B. W. Nahory, C. Wilburn, Nathan A. Schwadron, M. E. Wiedenbeck, C. Hawkins, M. Bullough, M. D. Rusert, J. S. Rankin, V. Glasson, S. E. Weidner, T. T. von Rosenvinge, R. A. Leske, R. M. Crabill, A. C. Cummings, R. A. Mewaldt, d. T. Everett, E. C. Stone, E. R. Christian, Andrew Davis, A. Newton, S. Shuman, N. G. Angold, Jill Burnham, N. Greenwood, H. Black, Walter R. Cook, T. L. Johnson, P. A. Goodwin, B. Birdwell, S. Walsh
Publikováno v:
Astronomy & Astrophysics. 650:A27
Context. Silicon solid-state detectors are commonly used for measuring the specific ionization, dE∕dx, in instruments designed for identifying energetic nuclei using the dE∕dx versus total energy technique in space and in the laboratory. The ener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce8d785f5615d8e43cd02effef8e4a3e
https://doi.org/10.1051/0004-6361/202039754
https://doi.org/10.1051/0004-6361/202039754
Autor:
Sherry Yennello, Marian Jandel, D. V. Shetty, S. Galanopoulos, S. Wuenschel, N.M. Greenwood, C.D. Wilburn, Brian Stein, R. Q. Dienhoffer, A.L. Keksis, M. Bullough, S. Walsh, S. N. Soisson, G. A. Souliotis, L. W. May, Zachary Kohley
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 613:240-244
A dual-axis dual-lateral position-sensitive detector has been developed for charged particle detection. This detector consists of a 20×20 mm square double-sided p-on-n silicon structure with a highly uniform resistive junction and ohmic layers with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b148f83beff57adea00803e30262d04a
https://doi.org/10.1016/j.nima.2009.11.053
https://doi.org/10.1016/j.nima.2009.11.053
Autor:
C. A. Gagliardi, C.D. Wilburn, R. E. Tribble, M. McCleskey, M. Bullough, Y. Li, Livius Trache, S. Walsh, A. Banu
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 593:399-406
We report on a recently developed novel type of large area (62 mm x 62 mm) position sensitive silicon detector with four-corner readout. It consists of a square-shaped ion-implanted resistive anode framed by additional low-resistivity strips with res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e550ef486cb95cf4e7fb6b5050e3b71
https://doi.org/10.1016/j.nima.2008.05.016
https://doi.org/10.1016/j.nima.2008.05.016
Autor:
C.D. Wilburn, E. Smith, George R. Kalbfleisch, J. Snow, M. Bullough, J. Kuehler, A.D. Lucas, T. McMahon, Phillip Gutierrez, D. Kaplan, Michael Wood, P. Skubic
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 355:366-385
Measurements of the signal to noise, charge sharing, cluster distribution properties, charge correlation and spatial resolution as a function of angle of incidence have been conducted in a high energy pion beam at Fermilab for a variety of DC-coupled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45adb33a852802f50b5adc994992b03b
https://doi.org/10.1016/0168-9002(94)01134-6
https://doi.org/10.1016/0168-9002(94)01134-6
Autor:
U. C. Dunwoody, A.D. Lucas, G. A. Beck, V. Gibson, C.D. Wilburn, A. A. Carter, N.M. Greenwood, Phillip Allport, T. W. Pritchard, M. Bullough, A. J. Martin, M. J. Goodrick, J. R. Carter
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 348:416-420
The use of the field effect transistor, integrated onto AC-coupled silicon detectors, as a novel technique for biasing the implanted p + strips [P.P. Allport et al., Nucl. Instr. and Meth. A 310 (1991) 155], was first employed for the OPAL microverte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1823cb72645ac4c115fc05997e9fd5d8
https://doi.org/10.1016/0168-9002(94)90770-6
https://doi.org/10.1016/0168-9002(94)90770-6
Akademický článek
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Autor:
Paul Seller, A.D. Lucas, John Hill, Phillip Allport, A.A. Carter, M. J. Goodrick, V. Gibson, C.D. Wilburn, N.M. Greenwood, J. R. Carter, M. Bullough, L. Nardini, T.W. Pritchard, S.L. Thomas, S G Katvars
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 310:155-159
A method has been developed for biassing the strips of a silicon microstrip detector with a tunable dynamic resistance. This allows the strip potentials to be tied to a fixed voltage, virtually independent of the strip leakage currents, whilst requir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be81b1d3fcb07ac00809f21e55da116f
https://doi.org/10.1016/0168-9002(91)91016-o
https://doi.org/10.1016/0168-9002(91)91016-o