Zobrazeno 1 - 10
of 614
pro vyhledávání: '"M. Breitwisch"'
Autor:
D. K. Finnemore, M. Breitwisch
Publikováno v:
Physical Review B. 62:671-677
Artificial structures were intentionally introduced into Nb films in order to study the interaction of a single Abrikosov vortex with pinning sites caused by these known defects. A vortex trapped on one of these structures or defects can be induced t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35f0675fbf23df98871116c093f1812f
https://doi.org/10.1103/physrevb.62.671
https://doi.org/10.1103/physrevb.62.671
Publikováno v:
Physical Review B. 60:10508-10512
Thermal depinning of a single vortex trapped in a superconducting thin film has been measured in order to study the Bean-Livingston surface barrier. There are two forces that bias the motion of the vortex in the natural pinning potential of the film.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82bc02fa2a95fb33b5221950f03ca280
https://doi.org/10.1103/physrevb.60.10508
https://doi.org/10.1103/physrevb.60.10508
Flux expulsion and reversible magnetization in the stripe phase superconductorLa1.45Nd0.40Sr0.15CuO4
Publikováno v:
Physical Review B. 56:2820-2823
Magnetization and free energy surfaces have been studied for superconducting La{sub 1.45}Nd{sub 0.40}Sr{sub 0.15}CuO{sub 4} in order to determine whether this stripe-phase material has a thermodynamic critical field curve, H{sub c}, similar to the cl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcb4f3b7f0e5d2abeb2eb0525a2adad0
https://doi.org/10.1103/physrevb.56.2820
https://doi.org/10.1103/physrevb.56.2820
Publikováno v:
IEEE Transactions on Appiled Superconductivity. 7:1691-1694
The growth of hillocks at the interface between Bi(2212) and Ag has been found to occur over a wide range of oxygen partial pressure and in the vicinity of 700/spl deg/C, a temperature far below the Bi(2212)-Bi(2223) conversion temperature. These hil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12d8036a6f7bdafe0415bca314ae8a5a
https://doi.org/10.1109/77.620904
https://doi.org/10.1109/77.620904
Publikováno v:
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.
A method based on Frenkel-Poole emission is proposed to model the I–V data of the amorphous state (high resistance state) in mushroom-type phase-change memory (PCM) devices. We found the I–V characteristics in the high resistance state are domina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b8b1fa26f78d73a0cdf4426d55069fa
https://doi.org/10.1109/icsict.2010.5667556
https://doi.org/10.1109/icsict.2010.5667556
Autor:
null Sungjae Lee, L. Wagner, B. Jagannathan, S. Csutak, J. Pekarik, N. Zamdmer, M. Breitwisch, R. Ramachandran, G. Freeman
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
We report record RF FET performance in 65 and 90-nm silicon-on-insulator (SOI) CMOS technologies featuring measured gate lengths from 27 to 43 nm and analyze factors contributing to that performance. The effect of layout and geometry optimization as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf5b8275a9a09755367891510cda8122
https://doi.org/10.1109/iedm.2005.1609317
https://doi.org/10.1109/iedm.2005.1609317
Autor:
Go, Shao-Xiang1 (AUTHOR), Lim, Kian-Guan1 (AUTHOR), Lee, Tae-Hoon2,3 (AUTHOR), Loke, Desmond K.1 (AUTHOR) desmond_loke@sutd.edu.sg
Publikováno v:
Small Science. Mar2024, Vol. 4 Issue 3, p1-34. 34p.
Autor:
Stenz, Christian1 (AUTHOR) stenz@physik.rwth-aachen.de, Pries, Julian1 (AUTHOR), Surta, T. Wesley2 (AUTHOR), Gaultois, Michael W.3 (AUTHOR), Wuttig, Matthias1,4 (AUTHOR) wuttig@physik.rwth-aachen.de
Publikováno v:
Advanced Science. 12/27/2023, Vol. 10 Issue 36, p1-14. 14p.
Publikováno v:
Advanced Electronic Materials; Dec2024, Vol. 10 Issue 12, p1-15, 15p
Publikováno v:
RSC Advances; 2024, Vol. 14 Issue 41, p29812-29826, 15p