Zobrazeno 1 - 10
of 37
pro vyhledávání: '"M. Blez"'
Publikováno v:
Microwave and Optical Technology Letters. 7:57-60
Investigation of microwave mixing properties of MQW DFB lasers in the millimeter-wave domain showed efficient conversion loss for both analog and digital signals. Conversion losses as low as 3, 7.5, and 14 dB have been found for a 5-GHz local oscilla
Publikováno v:
IEEE Journal of Quantum Electronics. 29:1676-1681
The ability of the InGaAs/InGaAlAs multi-quantum-well (MQW) system to achieve ultra-low-chirp operation under 10-Gb/s operation is experimentally demonstrated. The MQW active layer has been grown by a solid-source molecular beam epitaxy (MBE) method.
Publikováno v:
Journal of Crystal Growth. 111:484-488
AlGaInAs SCH MQW lasers with continuosly graded bandgap active region have been grown by MBE lattice matched to InP. The design of the structure and the MBE growth technique used to grow graded quaternary layers are reported in details. Improved lase
Publikováno v:
13th IEEE International Semiconductor Laser Conference.
Autor:
M. Gilleron, C. Kazmierski, M. Quillec, M. Blez, H. Nakajima, D. Mathoorasing, Bernard Sermage
Publikováno v:
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.
The authors report the successful realization of InGaAs/InGaAlAs MQW (multiquantum well) active layer DFB (distributed feedback) BRS (buried ridge structure) lasers with good static, dynamic, and spectral performances, together with a very low linewi
Publikováno v:
IEEE Photonics Technology Letters. 6:894-896
The measurement of spontaneous emission power above threshold has shown a nearly linear increase with biasing current in a 1.55-/spl mu/m InGaAs/InGaAlAs multiple quantum-well laser. Based on this measurement, we propose a novel experimental method t
Autor:
D. Mathcoorasing, Christophe Kazmierski, Abdallah Ougazzaden, M. Blez, G. Lemestreallan, E. Ravis, D. Robein
Publikováno v:
Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).
The design of high bandwidth high efficiency 2 section MQW DFB lasers has been performed. 18 GHz FM bandwidth DFB lasers with FM efficiency of 1.5 GHz/mA are successfully achieved, which represents to our knowledge the highest FM efficiency compatibl
Publikováno v:
Electronics Letters. 29:973-975
10 Gbit/s transmission over 116 km of standard dispersive fibre has been performed with a simple direct-detection FSK system using a strained-MQW VUG DFB high FM efficiency laser directly driven in a mixed ASK-FSK modulation format. This distance has
Autor:
Anton Grabmaier, Abdallah Ougazzaden, Andreas Hangleiter, C. Kazmierski, M. Blez, M. Schofthaler
Publikováno v:
Applied Physics Letters. 62:52-54
We present the first measurements of the dynamic response of InGaAs/InGaAsP multiquantum‐well lasers which clearly show the effect of the carrier transport phenomena on the modulation response. Using our parasitic‐free optical modulation method,
Autor:
C. Kazmierski, H. Nakajima, M. Gilleron, M. Blez, M. Quillec, D. Mathoorasing, Bernard Sermage
Publikováno v:
Electronics Letters. 28:1040-1042
The successful realisation of high speed MBE grown InGaAs/InGaAlAs MQW active layer DFB BRS lasers is reported, with threshold currents as low as 9.5 mA, and bandwidths up to 9 GHz. The devices operate at l0 Gbit/s, with a chirp value lower than 0.1