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pro vyhledávání: '"M. Bissiri"'
Akademický článek
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Akademický článek
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Autor:
M. Bissiri, Riccardo Cogo
Publikováno v:
Innovations in Insurance, Risk- and Asset Management.
Behavioral risk affects the pricing of assets and liabilities with embedded pre-payment/extension options whenever the option holder does not act purely on the strength of financial convenience but follows an uncertain and sub-optimal exercise strate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c6044eabca7f098e53c61d7a705f08
https://doi.org/10.1142/9789813272569_0001
https://doi.org/10.1142/9789813272569_0001
Autor:
D. Gollub, Jordi Ibáñez, Amalia Patanè, R. J. Airey, Mark Hopkinson, Laurence Eaves, J. Endicott, Alfred Forchel, G. Hill, M. Bissiri
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 21:892-896
We use a combination of magneto-tunnelling and photoluminescence spectroscopy techniques to explore the admixing of the extended GaAs conduction band states with the localised N-impurity states in dilute GaAs 1 - y N y quantum wells (QWs) incorporate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fea8a5ce87ce4639a69202c929999915
https://doi.org/10.1016/j.physe.2003.11.145
https://doi.org/10.1016/j.physe.2003.11.145
Autor:
Marco Felici, G. Baldassarri Höger von Högersthal, Antonio Polimeni, Peter J. Klar, Wolfgang Stolz, Mario Capizzi, Francesco Masia, Weimin Chen, A. Frova, M. Bissiri, Charles W. Tu, Irina Buyanova, H. P. Xin
Publikováno v:
Physica B: Condensed Matter. :371-376
Hydrogen irradiation leads to the passivation of the electronic activity of nitrogen in Ga(AsN), thus allowing a fine tuning of the material optical properties. Here, some recent results on the effects that hydrogen irradiation has on the electronic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aacb4363c88417aeb6c6c706d2eb3fe5
https://doi.org/10.1016/j.physb.2003.09.064
https://doi.org/10.1016/j.physb.2003.09.064
Autor:
Paola Frigeri, Mario Capizzi, S. Franchi, D. Ochoa, M. Bissiri, G. Baldassarri Höger von Högersthal
Publikováno v:
physica status solidi (b). 237:301-307
Microphotoluminescence and resonant photoluminescence experiments in a variety of InGaAs quantum dots (QD's) differing for size, shape, indium content, and growth technique are reported. In the case of large QD's, the excited state energies determine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bcc003d1b1004d1df4c26873e8c4cb44
https://doi.org/10.1002/pssb.200301768
https://doi.org/10.1002/pssb.200301768
Autor:
Alfred Forchel, Mario Capizzi, G. Baldassarri Höger von Högersthal, Massimo Bersani, M. Barozzi, Michael Fischer, Antonio Polimeni, D. Gollub, Damiano Giubertoni, M. Bissiri
Publikováno v:
Solid-State Electronics. 47:447-453
We report on the effects of N incorporation on the electronic properties of (InGa)(AsN)/GaAs heterostructures as investigated by photoluminescence (PL) spectroscopy. PL under a magnetic field shows an increase in the electron effective mass in the N-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55800e261b8f88b52db93b68cee76a4e
https://doi.org/10.1016/s0038-1101(02)00387-8
https://doi.org/10.1016/s0038-1101(02)00387-8
Autor:
A. Frova, F. Ranalli, Alfred Forchel, M. Reinhardt, Michael Fischer, V. Gaspari, Mario Capizzi, M. Bissiri, G. Baldassarri Höger von Högersthal, Antonio Polimeni
Publikováno v:
physica status solidi (a). 190:651-654
The effects of H irradiation on the optical properties of GaAs 1-y N y epilayers in the dilute N limit have been studied. H irradiation leads to a progressive and finally complete passivation of bound exciton levels related to N complexes. A further
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f6fc7abd3db7b675082eae8427d1caa
https://doi.org/10.1002/1521-396x(200204)190:3<651::aid-pssa651>3.0.co
https://doi.org/10.1002/1521-396x(200204)190:3<651::aid-pssa651>3.0.co
Autor:
A. Miriametro, Mario Capizzi, M. Fischer, G. Baldassarri Höger von Högersthal, M. Bissiri, A. Frova, M. Geddo, M. Reinhardt, Antonio Polimeni, F. Ranalli, V. Gaspari, Alfred Forchel
Publikováno v:
Physica B: Condensed Matter. :850-853
Photoluminescence and photoreflectance spectroscopy are used to investigate the electronic properties of InxGa1−xAs1−yNy/GaAs heterostructures treated with low-energy atomic hydrogen. With increasing hydrogen doses, the InxGa1−xAs1−yNy optica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f480c4a17d9bf5f724dc9717554aa73
https://doi.org/10.1016/s0921-4526(01)00911-5
https://doi.org/10.1016/s0921-4526(01)00911-5
Autor:
M. Bissiri, V. Gaspari, G. Baldassarri H. v. H., F. Ranalli, A. Polimeni, M. Capizzi, A. Nucara, M. Geddo, M. Fischer, M. Reinhardt, A. Forchel
Publikováno v:
Acta Physica Polonica A. 100:365-371
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5942ac51acbded7ec2b09f9af3ccc64
https://doi.org/10.12693/aphyspola.100.365
https://doi.org/10.12693/aphyspola.100.365