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Autor:
M. Biaho, Volker Gottschalch, J. Kvietkova, Bernd Rheinländer, J. Skrinjarova, Jozef Kováč, S. Hardt, Jan Jakabovic
Publikováno v:
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386).
We present a resonant cavity LED with an InAs monolayer active region embedded in an AlAs/AlGaAs vertical resonant cavity. In comparison to the structures without a resonator but with the same active region the realized resonant cavity LED exhibited