Zobrazeno 1 - 10
of 86
pro vyhledávání: '"M. Bertoglio"'
Publikováno v:
Micro and Nano Engineering, Vol 1, Iss , Pp 49-55 (2018)
The early formation of NiSi2 has been observed during the solid state reaction between Ni(W,Pt) films and Si (001) substrates at a temperature of 295 °C. The maximum contents of W and Pt additions are ~28 at.%. In-situ X-ray diffraction (XRD) measur
Externí odkaz:
https://doaj.org/article/91a002f5cfd74ee7b4882154bce71b6b
Akademický článek
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Autor:
J Remondina, A Portavoce, M Bertoglio, G Roland, E Petroni, D Benoit, Y Le Friec, F Lorut, M Putero
Publikováno v:
Nanotechnology. 34:285702
Ge-rich Ge2Sb2Te5 (GGST) is considered as one of the best candidates for industrial phase change memory production. GGST memory cells are generally embedded with Si or Ti nitride layers to prevent oxidation, as it leads to an undesired decrease of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70e87cf1ffc4108e8a131537a52aaad0
https://doi.org/10.1088/1361-6528/accc38
https://doi.org/10.1088/1361-6528/accc38
Autor:
A Portavoce, G Roland, J Remondina, M Descoins, M Bertoglio, M Amalraj, P Eyméoud, D Dutartre, F Lorut, M Putero
Publikováno v:
Nanotechnology
Nanotechnology, 2022, 33 (29), pp.295601. ⟨10.1088/1361-6528/ac6813⟩
Nanotechnology, 2022, 33 (29), pp.295601. ⟨10.1088/1361-6528/ac6813⟩
Simulation of atomic redistribution in Ge–Sb–Te (GST)-based memory cells during SET/RESET cycling is needed in order to understand GST memory cell failure and to design improved non-volatile memories. However, this type of atomic scale simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9bb2ddc04c8fcf8621b885f2de07680f
https://pubmed.ncbi.nlm.nih.gov/35439738
https://pubmed.ncbi.nlm.nih.gov/35439738
Structural and magnetic properties of MnCoGe ferromagnetic thin films produced by reactive diffusion
Autor:
E. Assaf, Khalid Hoummada, Alain Portavoce, L. Patout, Ahmed Charaï, R. Clérac, M. Bertoglio, Sylvain Bertaina
Publikováno v:
Applied Surface Science
Applied Surface Science, 2019, 488, pp.303-315. ⟨10.1016/j.apsusc.2019.05.226⟩
Applied Surface Science, Elsevier, 2019, 488, pp.303-315. ⟨10.1016/j.apsusc.2019.05.226⟩
Applied Surface Science, 2019, 488, pp.303-315. ⟨10.1016/j.apsusc.2019.05.226⟩
Applied Surface Science, Elsevier, 2019, 488, pp.303-315. ⟨10.1016/j.apsusc.2019.05.226⟩
International audience; The structure, the chemistry, and the magnetic properties of MnCoGe thin films elaborated by reactive diffusion were investigated. In situ X-ray diffraction (XRD) was used to study phase formation during thin film reaction. Mn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a6db2bcc0cc43efb774dd2d7a68defa
https://doi.org/10.1016/j.apsusc.2019.05.226
https://doi.org/10.1016/j.apsusc.2019.05.226
Autor:
Dominique Mangelinck, Anders Hallén, Loïc Patout, Marion Descoins, Khalid Hoummada, H. Khelidj, Alain Portavoce, M. Bertoglio, Ahmed Charaï, M.C. Benoudia
Publikováno v:
Materials Today Communications
Materials Today Communications, Elsevier, 2020, pp.101915. ⟨10.1016/j.mtcomm.2020.101915⟩
Materials Today Communications, 2020, pp.101915. ⟨10.1016/j.mtcomm.2020.101915⟩
Materials Today Communications, Elsevier, 2020, pp.101915. ⟨10.1016/j.mtcomm.2020.101915⟩
Materials Today Communications, 2020, pp.101915. ⟨10.1016/j.mtcomm.2020.101915⟩
The semi-conductor Ge1―xSnx exhibits interesting properties for optoelectronic applications. In particular, Ge1―xSnx alloys with x ≥ 0.1 exhibit a direct band-gap, and integrated in complementary-metal-oxide-semiconductor (CMOS) technology, sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59612a281d4540c13ea7a176fc58923f
https://hal.archives-ouvertes.fr/hal-03065804/document
https://hal.archives-ouvertes.fr/hal-03065804/document
Autor:
Marion Descoins, Khalid Hoummada, Abdelkhalek Kammouni, Alain Portavoce, Nouredine Oueldna, M. Bertoglio
Publikováno v:
Materials Letters
Materials Letters, 2020
Materials Letters, Elsevier, 2020
Materials Letters, 2020
Materials Letters, Elsevier, 2020
International audience; Mg-Ag-Sb thin films were deposited by magnetron sputtering using a commercial Mg 1/3 Ag 1/3 Sb 1/3 target. All the films contain principally the two phases Ag 3 Sb and alpha-MgAgSb in same proportions but exhibit different mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91b766cbb4436499fdc1b3e22c6f5b49
https://amu.hal.science/hal-03046413/file/Oueldna_ML_corrected.pdf
https://amu.hal.science/hal-03046413/file/Oueldna_ML_corrected.pdf
Autor:
Isabela M. Bertoglio, Glaucia F. Abrahao, Fernando H.C. de Souza, Renata Miossi, Paloma C. de Moraes, Samuel K. Shinjo, Eloisa Bonfá, Michelle R. Ugolini Lopes
Publikováno v:
Clinics, Volume: 77, Article number: 100031, Published: 13 MAY 2022
Objective Therapeutic targets in Idiopathic Inflammatory Myopathies (IIM) are based on the opinions of physicians/specialists, which may not reflect the main concerns of patients. The authors, therefore, assessed the outcome concerns of patients with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27a1ca16d14eb7cf7e686b7c418c7cfe
https://doi.org/10.1016/j.clinsp.2022.100031
https://doi.org/10.1016/j.clinsp.2022.100031
Publikováno v:
Materialia
Materialia, 2019, 8, pp.100487. ⟨10.1016/j.mtla.2019.100487⟩
Materialia, Elsevier, 2019, 8, pp.100487. ⟨10.1016/j.mtla.2019.100487⟩
Materialia, 2019, 8, pp.100487. ⟨10.1016/j.mtla.2019.100487⟩
Materialia, Elsevier, 2019, 8, pp.100487. ⟨10.1016/j.mtla.2019.100487⟩
Carbon-doped Mn5Ge3 thin films were grown using magnetron sputtering and reactive diffusion or non-diffusive reaction (NDR). The C content, the Curie temperature, and the resonance field difference between the hard and easy axis were measured for all
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c5772e2c0ad3c47b6cc8935ac7437a5
https://hal.science/hal-02339514
https://hal.science/hal-02339514
Autor:
M. Bertoglio, J. Perrin Toinin, Marion Descoins, Dario Narducci, Lee Chow, Ting Luo, Alain Portavoce, Khalid Hoummada
Publikováno v:
Scripta Materialia
Scripta Materialia, Elsevier, 2018, 150, pp.66-69. ⟨10.1016/j.scriptamat.2018.02.037⟩
Scripta Materialia, 2018, 150, pp.66-69. ⟨10.1016/j.scriptamat.2018.02.037⟩
Scripta Materialia, Elsevier, 2018, 150, pp.66-69. ⟨10.1016/j.scriptamat.2018.02.037⟩
Scripta Materialia, 2018, 150, pp.66-69. ⟨10.1016/j.scriptamat.2018.02.037⟩
PdGe contact fabrication on Ge(001) wafers doped with Ga is investigated using conventional complementary metal-oxide-semiconductor processes. Despite a p-type doping level of ~1.4 × 1020 cm−3, the resistivity of the PdGe contact is found to be tw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b752ef7001c191221d3d78fa55a19040
https://doi.org/10.1016/j.scriptamat.2018.02.037
https://doi.org/10.1016/j.scriptamat.2018.02.037