Zobrazeno 1 - 10
of 20
pro vyhledávání: '"M. Bergsmann"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :578-583
Layers with a thickness in the nm range are of growing importance in science and technology. We describe, how the thickness and growth modes of such nm-layers can be characterized by time-of-flight low energy ion scattering (TOF-LEIS), when all backs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c61769a2ae842870f01409ea527e44f
https://doi.org/10.1016/j.nimb.2004.01.123
https://doi.org/10.1016/j.nimb.2004.01.123
Publikováno v:
Surface and Interface Analysis. 34:763-766
We studied the characterization of thin metallic layers vacuum-deposited by magnetron sputtering onto commercial polyethylene terephthalate (PET) films in an industrial web coater. Because the technology of metal coating for technical films tends mor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca0e913306096d93a8d229b3a119c979
https://doi.org/10.1002/sia.1406
https://doi.org/10.1002/sia.1406
Autor:
M. Bergsmann, Peter Bauer
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 173:470-474
We studied, how precisely the position of a marker peak in an Rutherford backscattering (RBS) spectrum can be determined. For that purpose, we chose the following approach. Repeatedly, the primary energy of a proton beam was set to one of three selec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eff094d40346387f917d1768adc8340
https://doi.org/10.1016/s0168-583x(00)00408-0
https://doi.org/10.1016/s0168-583x(00)00408-0
Autor:
R. Díez Muiño, G. Schrenk, M. Bergsmann, Andrés Arnau, W. Raab, A. Salin, Pedro M. Echenique, F. Kastner, Peter Bauer
Publikováno v:
Physical Review B. 62:3153-3159
We present measurements and calculations of electronic stopping of protons and deuterons in Mg (gas and solid) in the range 15--650 keV/A. The measurements were performed by transmitting the ion beam through a vapor cell containing solid and gaseous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d656ae9c6a0429fa39fb7476ac2570e3
https://doi.org/10.1103/physrevb.62.3153
https://doi.org/10.1103/physrevb.62.3153
Publikováno v:
ResearcherID
A slow ion that impinges on a target will need to travel a certain distance within the target – called pre-equilibrium length – in order to reach charge equilibrium. In this transient region, projectiles may suffer energy loss different from the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6dc70100553084e4f0f4aed922f8035
https://doi.org/10.1016/s0168-583x(99)01167-2
https://doi.org/10.1016/s0168-583x(99)01167-2
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :1218-1222
The energy loss of slow ions can be measured with high precision using our two-branched time-of-flight set-up (DUAL-TOF): one branch (reference line) yields the momentary beam energy with a relative accuracy ΔE E −3 . while from the other branch (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a62bf83f0637be67927e2fe66b5af06
https://doi.org/10.1016/s0168-583x(97)00816-1
https://doi.org/10.1016/s0168-583x(97)00816-1
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 118:593-595
The energy spread of a Van de Graaff accelerator is inherently larger than that of a Cockroft-Walton accelerator, due to fluctuations of the belt charge and the limitations of the slit regulation system. We present time-of-flight (TOF) measurements o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3746e822da48c9d1650d08346035907
https://doi.org/10.1016/0168-583x(95)01118-8
https://doi.org/10.1016/0168-583x(95)01118-8
Autor:
Florian Eder, Marcus Halik, R. Treutlein, Günter Schmid, R. Einsiedler, Ute Zschieschang, M. Bergsmann, Hagen Klauk, Christine Dehm
Publikováno v:
61st Device Research Conference. Conference Digest (Cat. No.03TH8663).
In this paper, we have developed a robust, reliable organic TFT process that allows the fabrication of organic TFTs and integrated circuits on a variety of substrates, including polyethylene naphthalate (PEN), polyethylene terephthalate (PET), and pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43bd34106c26e5543210d53a4f897a28
https://doi.org/10.1109/drc.2003.1226924
https://doi.org/10.1109/drc.2003.1226924
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Akademický článek
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