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Publikováno v:
Scopus-Elsevier
In order to take the full advantage of the high-temperature SiC and GaN operating power devices, package materials able to withstand high-temperature storage and large thermal cycles are required. However, a survey of the commercially available silic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b54bfd82cdbfb926a2198068f9afdc80
https://doi.org/10.4071/hiten-session6-paper6_6
https://doi.org/10.4071/hiten-session6-paper6_6
Autor:
Sombel Diaham, Sorin Dinculescu, M. Bechara, Cong-Duc Pham, Pierre Bidan, Rabih Khazaka, Marie-Laure Locatelli
Publikováno v:
IEEE Transactions on Power Electronics. 29:2281-2288
High-temperature power electronics represent an increasing demand. Higher power density or severe ambient temperature applications become the trend, while silicon carbide components with 250-300 °C Tjmax are emerging. Among materials used in high-vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeeef279d576b9bb97fffda64d2e271a
https://doi.org/10.1109/tpel.2013.2279997
https://doi.org/10.1109/tpel.2013.2279997
Publikováno v:
European Journal of Electrical Engineering. 15:157-168
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3246d9c29046a61de1154d6c52c316a
https://doi.org/10.3166/ejee.15.157-168
https://doi.org/10.3166/ejee.15.157-168
Autor:
Diakos, Antònio C.1 (AUTHOR), Bezerra, Taynar L.1 (AUTHOR), Borges-Silva, Waléria1 (AUTHOR), Cedro, Mateus A.1 (AUTHOR), de Jesus, Rogério F.1 (AUTHOR), Aguiar, Daniel. M.2 (AUTHOR), Mizuuti, Priscila J. S. G.2 (AUTHOR), Magalhães, Tayane B. S.2 (AUTHOR), Pereira, Nathalia A.2 (AUTHOR), Gondim, Luís F. P.1 (AUTHOR) pita@ufba.br
Publikováno v:
BMC Veterinary Research. 12/28/2024, Vol. 20 Issue 1, p1-6. 6p.
Publikováno v:
Journal of American College Health. Dec2024, Vol. 72 Issue 9, p3621-3631. 11p.
Autor:
Ahsan, Beena Umar1,2 bahsan1@hfhs.org, Paridon, Alexander A.3, Gaba, Arthur R.1, Ziying Zhang1, Azordegan, Nazila1
Publikováno v:
American Journal of Case Reports. 11/28/2024, Vol. 25, p1-4. 4p.
Autor:
Pascale Salameh, M. Najjar Aad, M. Semaan, M. Bechara, L. Bou Tanios, B. El Kadi, R. El Hawzi
Publikováno v:
Revue d'Épidémiologie et de Santé Publique. 55:308-313
Background Drug errors constitute a public health problem. The objective of our study was to describe drug circuit essential steps in the Lebanese hospitals, starting at prescription to administration, in comparison with Lebanese accreditation standa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d98683db3826c4a78eec8139a39225e9
https://doi.org/10.1016/j.respe.2007.05.001
https://doi.org/10.1016/j.respe.2007.05.001
Autor:
Rabih Khazaka, Sombel Diaham, M. Bechara, Rajesh Kumar, Marie-Laure Locatelli, Christophe Tenailleau
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2014, vol. 115 (n° 5), pp.054102. ⟨10.1063/1.4863877⟩
Journal of Applied Physics, American Institute of Physics, 2014, vol. 115 (n° 5), pp.054102. ⟨10.1063/1.4863877⟩
International audience; The dielectric strength of parylene HT (PA-HT) films was studied at room temperature in a wide thickness range from 500 nm to 50 μm and was correlated with nano- and microstructure analyses. X-ray diffraction and polarized op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8dfb6c655f16ae0e95a84e2fda7a5b59
https://hal.archives-ouvertes.fr/hal-01163374/file/Diaham_13966.pdf
https://hal.archives-ouvertes.fr/hal-01163374/file/Diaham_13966.pdf
Publikováno v:
2013 IEEE International Conference on Solid Dielectrics (ICSD).
In this paper, transient current characteristics for fluorinated parylene (PA-HT) films are investigated in the temperature range between 200°C and 350°C as a function of the electric field, material thickness and electrode polarity using a non sym
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76e14e6c5bc6b15a202ac2a78e87ad56
https://doi.org/10.1109/icsd.2013.6619668
https://doi.org/10.1109/icsd.2013.6619668