Zobrazeno 1 - 10
of 97
pro vyhledávání: '"M. Barmawi"'
Publikováno v:
Journal of Mathematical and Fundamental Sciences, Vol 33, Iss 1 (2019)
Abstract. GaSb and Al GaSb are narrow gap semiconductors, is of current interest, for its optoelectronic application in the near and medium infra-red region. The large ratio of the ionization coefficient of hole and electrons is key factor for high s
Externí odkaz:
https://doaj.org/article/d4f370d8b7c640fda9082f40b4a7bcde
Publikováno v:
Journal of Mathematical and Fundamental Sciences, Vol 33, Iss 1 (2019)
Abstract. We have studied the effect of hydrogen plasma on GaN film, grown by plasma-assisted metalorganic chemical vapor deposition (MOCVD). GaN films grown on a sapphire (0001) without the buffer layer have a polycrystalline structure. While films
Externí odkaz:
https://doaj.org/article/7396859949304431acdf685fa2f20c3f
Publikováno v:
Journal of Mathematical and Fundamental Sciences, Vol 33, Iss 1 (2019)
Abstract. Quantum Dots is a nano structured materials, which is an interesting object for fundamental study as well as for applications. Quantum Dots has been used for optoelectronic devices, such as fast detectors and for lasers. In this paper we re
Externí odkaz:
https://doaj.org/article/29e42451711340539786d5b7e67066fd
Autor:
Budi Mulyanti, A. Subagio, F. S. Arsyad, P. Arifin, M. Barmawi, Irzaman Irzaman, Z. Jamal, U. Hashim
Publikováno v:
Journal of Mathematical and Fundamental Sciences, Vol 40, Iss 2 (2013)
In this paper, the growth of GaN:Mn thin films by plasma-assisted metalorganic chemical vapor deposition (PAMOCVD) method is reported. The method used in this study, utilizes a microwave cavity as a cracking cell to produce nitrogen radicals, which i
Externí odkaz:
https://doaj.org/article/add6de69e22548b5af63871f11715ed9
Publikováno v:
IEEE Access, Vol 11, Pp 24257-24280 (2023)
Several threats, such as misinformation and hoax, exist in social media as a frequently used technology to exchange information. These threats can be prevented if the reader can verify the message’s content integrity and source authenticity. One re
Externí odkaz:
https://doaj.org/article/e917b4e61dbd42f58aedd9cd41191132
Publikováno v:
Journal of Marine Research. 9:137-142
ABS TRAK : Pantai Mapak Indah merupakan pantai yang sering menjadi pantai pendaratan biota Penyu, umumnya penyu yang mendarat berjenis penyu Lekang (Lepidochelys olivaceae), pantai yang juga di gunakan untuk aktifitas nelayan dan pariwisata diduga ak
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Publikováno v:
ITB Journal of Science, Vol 40, Iss 2, Pp 97-108 (2008)
Journal of Mathematical and Fundamental Sciences, Vol 40, Iss 2 (2013)
Journal of Mathematical and Fundamental Sciences, Vol 40, Iss 2 (2013)
In this paper, the growth of GaN:Mn thin films by plasma-assisted metalorganic chemical vapor deposition (PAMOCVD) method is reported. The method used in this study, utilizes a microwave cavity as a cracking cell to produce nitrogen radicals, which i
Publikováno v:
Journal of Mathematical and Fundamental Sciences, Vol 38, Iss 2 (2013)
The Ti 1-x Co x O 2 thin films have been grown by MOCVD technique using titanium (IV) isopropoxide (TTIP) and tris (2,2,6,6-tetramethyl-3, 5-heptanedionato) Cobalt (III ) [Co(TMHD) 3 ] powder precursors. The tetrahydrofuran (THF) were used as a solve
Autor:
Zainuriah Hassan, Fong Kwong Yam, M. Barmawi, Sugianto, Mat Johar Abdullah, Pepen Arifin, K. Ibrahim, Y. C. Lee, Maman Budiman
Publikováno v:
Applied Surface Science. 249:91-96
We report on the characteristics of metal-semiconductor-metal (MSM) photodiodes based on GaN films grown on silicon substrates by electron cyclotron resonance (ECR) plasma-assisted metalorganic chemical vapor deposition (PA-MOCVD) at growth temperatu