Zobrazeno 1 - 10
of 756
pro vyhledávání: '"M. Baeumler"'
Autor:
M. Baeumler, Peter Brückner, Michael Dammann, Helmer Konstanzer, Michél Simon-Najasek, Andreas Graff, Sebastian Krause, Tobias Kemmer
Publikováno v:
IRPS
Degradation of 100 nm AlGaN/GaN HEMTs under DC and 10 GHz stress conditions has been compared and a promising median lifetime of more than 2000 h under RF stress in air at a drain voltage of 15 V and an average channel temperature of 230°C has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b48e9cdd23ba3cc2d00663ef4359513f
https://doi.org/10.1109/irps46558.2021.9405227
https://doi.org/10.1109/irps46558.2021.9405227
Autor:
Oliver Ambacher, Vladimir Polyakov, M. Baeumler, Rudiger Quay, Michael Dammann, Tobias Kemmer, Peter Brückner, Helmer Konstanzer
Publikováno v:
IRPS
A systematic investigation of the effect of temperature and electric field on the degradation of 100 nm AlGaN/GaN HEMTs stressed under on- and off-state conditions has been carried out. The shape of the degradation behavior is analyzed and compared b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2250aebd64c0bc7156ae6a0ede8768ca
https://doi.org/10.1109/irps45951.2020.9128308
https://doi.org/10.1109/irps45951.2020.9128308
Autor:
M. Baeumler, Michél Simon-Najasek, Maximilian Dammann, Peter Brückner, Rudiger Quay, Tobias Kemmer, Andreas Graff, Helmer Konstanzer
Publikováno v:
Microelectronics Reliability. :385-388
The effect of gate technology and semiconductor passivation on the switching speed and device reliability has been investigated. By reducing the parasitic capacitances and reducing the passivation induced surface charge density a median lifetime of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b140d9e2c1f1fd2a3502760d412ec8a
https://doi.org/10.1016/j.microrel.2018.06.042
https://doi.org/10.1016/j.microrel.2018.06.042
Publikováno v:
Journal of Applied Physics. 129:204501
The piezoelectric and spontaneous polarization of wurtzite ScxAl1−xN, GaxAl1−xN, and InxAl1−xN ternary compounds dramatically affects the electrical properties of pseudomorphic MexAl1−xN/GaN, MexAl1−xN/AlN, and MexAl1−xN/InN heterostructu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e09a327120dbe5ce763b163fbd8d572
https://doi.org/10.1063/5.0049185
https://doi.org/10.1063/5.0049185
Akademický článek
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Autor:
Michael Dammann, Tobias Kemmer, Peter Brückner, Rudiger Quay, Helmer Konstanzer, Oliver Ambacher, M. Baeumler
Publikováno v:
2018 International Integrated Reliability Workshop (IIRW).
We investigated the voltage- and temperature -dependent degradation of AIN/GaN high electron mobility transistors with gate lengths of 70 nm and 100 nm. The devices under test were dc stressed in semi-on-state conditions at constant power dissipation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99940b8a40f0ad7c82beaad0e7d6e976
https://doi.org/10.1109/iirw.2018.8727092
https://doi.org/10.1109/iirw.2018.8727092
Autor:
M. Baeumler, Helmer Konstanzer, M. Wespel, Peter Brückner, Stephan Maroldt, Michael Mikulla, Thomas Roedle, Ruediger Quay, Michael Dammann, P.J. van der Wel, Andreas Graff, Martino Lorenzini, Martin Fagerlind, Wolfgang Bronner
Publikováno v:
Microelectronics Reliability. 55:1667-1671
The temperature dependence of device degradation of AlGaN/GaN HEMTs on SiC substrate with a gate length of 0.25 μm has been investigated. The critical surface temperature, where device degradation sets in has been determined using drain-current step
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a292bc9915a396f34eac45316406fa6
https://doi.org/10.1016/j.microrel.2015.06.042
https://doi.org/10.1016/j.microrel.2015.06.042
Kniha
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Autor:
M. Wespel, Rudiger Quay, Maximilian Dammann, Vladimir Polyakov, Oliver Ambacher, M. Baeumler, Michael Mikulla, Patrick Waltereit, Richard Reiner
Publikováno v:
Microelectronics Reliability. 54:2656-2661
In this work we discuss the influence of the donor-like surface state density (SSD) on leakage currents and the breakdown voltages of AlGaN/GaN heterostructure field-effect transistors (HFET) at high temperature reverse bias (HTRB) step stress. A met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5b1baf89390898c5b6039959e862092
https://doi.org/10.1016/j.microrel.2014.09.016
https://doi.org/10.1016/j.microrel.2014.09.016
Autor:
S. Müller, W. Späth, J. Luft, W. Jantz, M. Baeumler, G. Herrmann, Cesare Frigeri, J. L. Weyher
Publikováno v:
Defect Recognition and Image Processing in Semiconductors 1997
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de316c584165184a0e5c7185fc3ba3e2
https://doi.org/10.1201/9781315140810-99
https://doi.org/10.1201/9781315140810-99
