Zobrazeno 1 - 10
of 43
pro vyhledávání: '"M. B. Small"'
Publikováno v:
Scripta Metallurgica et Materialia. 30:1531-1534
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::265262b94afa7f9a06eb67b0cfc2228d
https://doi.org/10.1016/0956-716x(94)90303-4
https://doi.org/10.1016/0956-716x(94)90303-4
Publikováno v:
Journal of Applied Physics. 74:969-978
The electromigration characteristics and kinetics of damage formation for Al(Cu,Si) line segments on a continuous W line and Al(Cu)/W two‐level interconnect structures have been investigated. The mass transport as a function of temperature was meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54b4e581ffc338809abdec1ed1d34057
https://doi.org/10.1063/1.354839
https://doi.org/10.1063/1.354839
Publikováno v:
Ultramicroscopy. 51:328-338
The demands of ULSI in the sub-micron regime require the understanding of properties and control of microstructure in a situation where one or more of the characteristic dimensions of the sample is of the same order as the grain size of the material.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b11015692c9f1cfd5f6890a857b3e4b2
https://doi.org/10.1016/0304-3991(93)90158-t
https://doi.org/10.1016/0304-3991(93)90158-t
Publikováno v:
MRS Online Proceedings Library. 265:171-176
Mass transport by electromigration in sputtered Cu line segments on a continuous W line has been measured using the drift velocity technique at temperatures from 166 to 396 °C. The Ta/Cu/Ta line segments are patterned by dry etching techniques. Cu m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12dd9cb5cbecdd23570b2cbc09b5fd14
https://doi.org/10.1557/proc-265-171
https://doi.org/10.1557/proc-265-171
Publikováno v:
MRS Online Proceedings Library. 265:73-82
Grain growth is the key process in the development of the microstructure of deposited metal films. Grain boundaries in turn exert a dominant influence on the properties of interconnects in integrated circuits. In addition to the practical importance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edea777293f445157b9bd6400db15fb4
https://doi.org/10.1557/proc-265-73
https://doi.org/10.1557/proc-265-73
Autor:
R. E. Broadie, M. B. Small, William Leslie Guthrie, Mark A. Jaso, D. J. Pearson, David B. Thompson, Frank B. Kaufman
Publikováno v:
Journal of The Electrochemical Society. 138:3460-3465
Interconnect features of W metal, recessed in an dielectric, can be formed using a novel chemical‐mechanical polish process. Mechanical action, to continually disrupt a surface passivating film on W, and chemical action, to remove W, appear to be r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94995311cbb9116637a117e80d6a2077
https://doi.org/10.1149/1.2085434
https://doi.org/10.1149/1.2085434
Autor:
D. J. Pearson, M. B. Small
Publikováno v:
IBM Journal of Research and Development. 34:858-867
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa93404ec3959a9f417fc54c04574185
https://doi.org/10.1147/rd.346.0858
https://doi.org/10.1147/rd.346.0858
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1498-1502
Patterning Ti/TiN/Ti/Al(2 wt. % Cu)/Si interconnection lines over 700 nm topographic steps in SiO2 with an angle of 84° is reported using a reactive ion etching. The etching gas is a mixture of BCl3/Cl2/N2/CHCl3 and the etching process uses a combin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::269a269059638459b301f255f6ac247b
https://doi.org/10.1116/1.576864
https://doi.org/10.1116/1.576864
Publikováno v:
Applied Physics Letters. 62:1023-1025
Damage formation at grain boundary junctions has long been recognized as the dominant electromigration failure mechanism in metal lines. We report the results of drift‐velocity experiments on fine lines with no reservoirs and find that the interfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47b3fa5d6954978a681bf572be6fe5a1
https://doi.org/10.1063/1.108513
https://doi.org/10.1063/1.108513
Publikováno v:
Journal of Applied Physics. 72:291-293
It is demonstrated that electromigration testing needs to be performed in structures that reflect use conditions, such as when there is a flux divergence as provided by the W stud‐Al(Cu) interface rather than in a simple planar structure. The Al(Cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bf2118de394d93fa24ff1fe8f420bcb
https://doi.org/10.1063/1.352335
https://doi.org/10.1063/1.352335