Zobrazeno 1 - 9
of 9
pro vyhledávání: '"M. B. Shoker"'
Autor:
A. Elmahjoubi, M. B. Shoker, O. Pagès, V. J. B. Torres, A. Polian, A. V. Postnikov, C. Bellin, K. Béneut, C. Gardiennet, G. Kervern, A. En Naciri, L. Broch, R. Hajj Hussein, J.-P. Itié, L. Nataf, S. Ravy, P. Franchetti, S. Diliberto, S. Michel, A. Abouais, K. Strzałkowski
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-11 (2023)
Abstract The emerging CdTe–BeTe semiconductor alloy that exhibits a dramatic mismatch in bond covalency and bond stiffness clarifying its vibrational-mechanical properties is used as a benchmark to test the limits of the percolation model (PM) work
Externí odkaz:
https://doaj.org/article/0a3a168ebbb74358b275589ee05592f0
Autor:
M. B. Shoker, T. Alhaddad, O. Pagès, V. J. B. Torres, A. V. Postnikov, A. Polian, R. Hajj Hussein, G. K. Pradhan, C. Narayana, C. Gardiennet, G. Kervern, L. Nataf, S. Ravy, J.-P. Itié, K. Strzałkowski, A. Marasek, F. Firszt
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract Raman scattering and ab initio Raman/phonon calculations, supported by X-ray diffraction, are combined to study the vibrational properties of Zn1−xBexTe under pressure. The dependence of the Be–Te (distinct) and Zn–Te (compact) Raman d
Externí odkaz:
https://doaj.org/article/8fe5b84c803c4ea1ae4346fbbf749f43
Autor:
Alhaddad, T., Shoker, M. B., Pagès, O., Postnikov, A. V., Torres, V. J. B., Polian, A., Le Godec, Y., Itié, J.-P., Broch, L., Bouzourâa, M. B., En Naciri, A., Diliberto, S., Michel, S., Franchetti, P., Marasek, A., Strzałkowski, K.
Publikováno v:
Journal of Applied Physics; 4/7/2023, Vol. 133 Issue 13, p1-1, 1p
Autor:
Alain Maillard, Jean-Paul Itié, Mala N. Rao, Olivier Pagès, Andrei Postnikov, Alain Polian, Franciszek Firszt, A. En Naciri, Vitor J.B. Torres, H. Dicko, M. B. Shoker, Rekha Rao, Laurent Broch, Karol Strzałkowski
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2019, 126 (10), pp.105707. ⟨10.1063/1.5111106⟩
Journal of Applied Physics, 2019, 126 (10), pp.105707. ⟨10.1063/1.5111106⟩
Journal of Applied Physics, American Institute of Physics, 2019, 126 (10), pp.105707. ⟨10.1063/1.5111106⟩
Journal of Applied Physics, 2019, 126 (10), pp.105707. ⟨10.1063/1.5111106⟩
International audience; We present a polarization-dependent pure transverse-optic (TO) Raman study of high-quality Cd x Zn 1−x Se single crystals with zincblende (cubic) structures (x 0:3) covering both the phonon and phonon-polariton variants of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d65822c3b5729e2157419fb55eac768
https://hal.univ-lorraine.fr/hal-02900963
https://hal.univ-lorraine.fr/hal-02900963
Autor:
Elmahjoubi, A.1 (AUTHOR), Shoker, M. B.1,2 (AUTHOR), Pagès, O.1 (AUTHOR) olivier.pages@univ-lorraine.fr, Torres, V. J. B.3 (AUTHOR), Polian, A.4,5 (AUTHOR), Postnikov, A. V.1 (AUTHOR), Bellin, C.4 (AUTHOR), Béneut, K.4 (AUTHOR), Gardiennet, C.6 (AUTHOR), Kervern, G.6 (AUTHOR), En Naciri, A.1 (AUTHOR), Broch, L.1 (AUTHOR), Hajj Hussein, R.1 (AUTHOR), Itié, J.-P.5 (AUTHOR), Nataf, L.5 (AUTHOR), Ravy, S.5 (AUTHOR), Franchetti, P.1 (AUTHOR), Diliberto, S.7 (AUTHOR), Michel, S.7 (AUTHOR), Abouais, A.8,9 (AUTHOR)
Publikováno v:
Scientific Reports. 11/18/2023, Vol. 13 Issue 1, p1-11. 11p.
Autor:
Shoker, M. B.1 (AUTHOR), Alhaddad, T.1 (AUTHOR), Pagès, O.1 (AUTHOR) olivier.pages@univ-lorraine.fr, Torres, V. J. B.2 (AUTHOR), Postnikov, A. V.1 (AUTHOR), Polian, A.3,4 (AUTHOR), Hajj Hussein, R.1 (AUTHOR), Pradhan, G. K.5 (AUTHOR), Narayana, C.6 (AUTHOR), Gardiennet, C.7 (AUTHOR), Kervern, G.7 (AUTHOR), Nataf, L.4 (AUTHOR), Ravy, S.4 (AUTHOR), Itié, J.-P.4 (AUTHOR), Strzałkowski, K.8 (AUTHOR), Marasek, A.8 (AUTHOR), Firszt, F.8 (AUTHOR)
Publikováno v:
Scientific Reports. 1/14/2022, Vol. 12 Issue 1, p1-10. 10p.
Autor:
Shoker, M. B.1, Pagès, Olivier1 olivier.pages@univ-lorraine.fr, Torres, V. J. B.2, Polian, A.3,4, Itié, J.-P.4, Pradhan, G. K.5, Narayana, C.6, Rao, M. N.7, Rao, R.7, Gardiennet, C.8, Kervern, G.8, Strzałkowski, K.9, Firszt, F.9
Publikováno v:
Scientific Reports. 11/13/2020, Vol. 10 Issue 1, p1-11. 11p.
Autor:
Shoker, M. B., Pagès, O., Dicko, H., Torres, V. J. B., Postnikov, A. V., Polian, A., Firszt, F., Strzałkowski, K., En Naciri, A., Broch, L., Rao, M. N., Rao, R., Maillard, A., Itié, J.-P.
Publikováno v:
Journal of Applied Physics; 9/14/2019, Vol. 126 Issue 10, pN.PAG-N.PAG, 16p, 10 Graphs
Autor:
Zhe Feng
Raman Scattering on Emerging Semiconductors and Oxides presents Raman scattering studies. It describes the key fundamental elements in applying Raman spectroscopies to various semiconductors and oxides without complicated and deep Raman theories.Acro