Zobrazeno 1 - 10
of 22
pro vyhledávání: '"M. B. Reine"'
Autor:
M. H. Weiler, M. B. Reine
Publikováno v:
Journal of Electronic Materials. 24:1329-1339
A new analytical model for the bias-dependent quantum efficiency of a HgCdTe P-on-n heterojunction photodiode with a valence band barrier elucidates the important physics of the phenomenon and shows that the background-induced shunt resistance is a r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab56ec00757a0c615ab7082ed7b46af5
https://doi.org/10.1007/bf02653092
https://doi.org/10.1007/bf02653092
Publikováno v:
Physics of Narrow Gap Semiconductors ISBN: 9783540111917
A contactless optical technique for measuring carrier lifetimes and defect levels in Hg0.7Cd0.3Te is presented. The technique is based on measuring the modulation of the absorption of a probe beam with E Eg. Initial data on near intrinsic and p-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f887d1e4be31fa6852e97d725d475e5
https://doi.org/10.1007/3-540-11191-3_23
https://doi.org/10.1007/3-540-11191-3_23
Autor:
S. P. DenBaars, A. K. Sood, B. Peres, P. Lamarre, U. Chowdhury, Allen W. Hairston, T. Li, K. K. Wong, M. Pophristic, C. Cooke, S. Guo, R. D. Dupuis, C. R. Eddy, S. P. Tobin, Michael M. Wong, M. B. Reine, R. Singh
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aba3c8464dc7701352ce063126f64ab5
https://doi.org/10.1117/12.653645
https://doi.org/10.1117/12.653645
Autor:
M. B. Reine
Publikováno v:
Infrared Detectors and Emitters: Materials and Devices ISBN: 9780792372066
This chapter reviews photovoltaic (PV) HgCdTe (MCT) infrared detectors. The intent is to present an overview of those PV MCT device approaches and technologies that are having the most impact today, and to give the reader an insight into the exciting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd4151b8db2a19c2feaaa29baa5e54de
https://doi.org/10.1007/978-1-4615-1607-1_12
https://doi.org/10.1007/978-1-4615-1607-1_12
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1182-1184
At higher temperatures HgCdTe photodiode dark currents are usually limited by bulk material properties exhibited as diffusion currents. As the temperature is decreased diode the dark currents transition to a region of smaller temperature dependence c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12f4675b4040df511d31cd0a51c75fcd
https://doi.org/10.1116/1.576941
https://doi.org/10.1116/1.576941
Publikováno v:
AIP Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2649d97d57ed10b474d4b613985d0ad
https://doi.org/10.1063/1.41082
https://doi.org/10.1063/1.41082
Publikováno v:
Solid-State Electronics. 24:719-723
Deep Level Transient Spectroscopy (DLTS) measurements have been used to characterize n+ − pHg1−xCdxTe junction photodiode performance. Deep level results obtained on a x = 0.320 liquid phase epitaxial grown photodiode and a x = 0.219 bulk quench
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::220fa773760ff5a231e94e202cc7536a
https://doi.org/10.1016/0038-1101(81)90052-6
https://doi.org/10.1016/0038-1101(81)90052-6
Publikováno v:
Journal of Applied Physics. 52:5182-5194
This paper presents an experimental study of minority‐carrier lifetime and recombination mechanisms in n+‐on‐pHg1−xCdxTe photodiodes. Diode pulse recovery lifetime measurements have been carried out as a function of temperature, net acceptor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fab5af67aefa747b24683ce67472411d
https://doi.org/10.1063/1.329421
https://doi.org/10.1063/1.329421
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 3:246-254
The metallurgical heterojunction located between liquid phase epitaxial Hg0.8Cd0.2Te films and CdTe substrates is characterized electrically and electro‐optically for the first time. This compositionally graded heterojunction is found to have zero
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a8ea3317c6a83fe69098affb004b338
https://doi.org/10.1116/1.573211
https://doi.org/10.1116/1.573211
Publikováno v:
Journal of Applied Physics. 52:5132-5138
Trapping parameters measured by deep level transient spectroscopy (DLTS) for several samples of Hg1−xCdxTe doped p type by mercury vacancies have been correlated with photodiode characteristics. The samples are Hg1−xCdxTe with x values of 0.215,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::668f3fa68d15969948e7cb0afab25f03
https://doi.org/10.1063/1.329412
https://doi.org/10.1063/1.329412