Zobrazeno 1 - 10
of 11
pro vyhledávání: '"M. B. Pinkovska"'
Autor:
T. I. Mosiuk, R. M. Vernydub, P. G. Lytovchenko, M. B. Pinkovska, D. P. Stratilat, V. P. Tartachnyk
Publikováno v:
Âderna Fìzika ta Energetika, Vol 25, Iss 2, Pp 125-133 (2024)
The electrophysical and radiation characteristics of the original and irradiated electrons with E = 2 MeV GaAsP light emitting diodes were studied. The results of measurements of current-current characteristics in the range of 77 - 300 K are given. I
Externí odkaz:
https://doaj.org/article/5fed525d5b0c408ea35198d8331ec24c
Autor:
A. I. Vlasenko, V. P. Veleschuk, Z. K. Vlasenko, M. P. Kisselyuk, P. G. Lytovchenko, I. V. Petrenko, V. P. Tartachnyk, M. B. Pinkovska
Publikováno v:
Âderna Fìzika ta Energetika, Vol 16, Iss 4, Pp 362-366 (2015)
Effect of the reactor fast neutron flux (E = 2 MeV, Ф = 2⋅1014 n/cm2) on the current-voltage, capacitance-voltage characteristics, the electroluminescence intensity of power ІnGaN/GaN LEDs on the SіC and AuSn/Si substrates are studied. It was re
Externí odkaz:
https://doaj.org/article/da621bd4936b4236a9388571a0e2a435
Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents
Autor:
V. G. Vorobiov, O. V. Konoreva, Ye. V. Malyi, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska
Publikováno v:
Âderna Fìzika ta Energetika, Vol 16, Iss 3, Pp 238-241 (2015)
Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avala
Externí odkaz:
https://doaj.org/article/41157c8c486947da97330a698511f2ab
Autor:
O. M. Hontaruk, O. V. Konoreva, М. V. Lytovchenko, E. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk
Publikováno v:
Âderna Fìzika ta Energetika, Vol 16, Iss 1, Pp 56-59 (2015)
Electroluminescence of green N-doped gallium phosphide light-emitting diodes was studied. The negative differential resistance region in the current-voltage characteristics was found at low temperature (Т ≤ 90 К). Possible reason of this phenomen
Externí odkaz:
https://doaj.org/article/04a13621a27d4c8b98c66505b027409e
Autor:
O. V. Konoreva, E. V. Maliy, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska
Publikováno v:
Âderna Fìzika ta Energetika, Vol 15, Iss 4, Pp 349-352 (2014)
Serial green and red GaP light emitting diodes were studied. Structures were irradiated at room temperatures with 2 MeV electrons in pulse mode and electrical characteristics were measured at 77 – 300 K. It was observed the new stage of negative di
Externí odkaz:
https://doaj.org/article/5de2af78a2d04fbcaab7a5af9d7b0777
Autor:
O. V. Konoreva, P. G. Litovchenko, E. V. Maliy, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk,, V. V. Shlapatska
Publikováno v:
Âderna Fìzika ta Energetika, Vol 14, Iss 4, Pp 158-162 (2013)
Microplasma breakdowns of red and green GaP diodes were studied. It has been shown that tunneling was the main component of reverse current at the beginning of the breakdown while an avalanche current prevailed at highs breakdown current. Microplasma
Externí odkaz:
https://doaj.org/article/e90443687a604dbfbdeaf006556f4d47
Publikováno v:
Journal of Nano- and Electronic Physics. 10:01018-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f9456f96437b22c9b857b41645744ab
https://doi.org/10.21272/jnep.10(1).01018
https://doi.org/10.21272/jnep.10(1).01018
Autor:
V. Tartachnyk, M. B. Pinkovska, A.P. Litovchenko, O.V. Konoreva, M. Drahomanov, V. Opilat, P.G. Litovchenko
Publikováno v:
Semiconductor physics, quantum electronics and optoelectronics. 12:276-279
GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46c31837083a821c672b107adb9521e8
https://doi.org/10.15407/spqeo12.03.276
https://doi.org/10.15407/spqeo12.03.276
Autor:
V.I. Khivrich, L.I. Barabash, P.G. Litovchenko, I.A. Marusan, Anatoly B. Rosenfeld, M. B. Pinkovska, V.I. Kuts
Publikováno v:
Radiation Protection Dosimetry. 66:225-228
A dosemeter for mixed gamma-neutron fields using p-MOSFET with thick oxide has been designed and studied. A positive charge is stored in the gate oxide under ionising radiation, and threshold voltage shifts can be used to measure the gamma ray compon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2fe6d2ae6670b4362cab43dc6bb6b85
https://doi.org/10.1093/oxfordjournals.rpd.a031722
https://doi.org/10.1093/oxfordjournals.rpd.a031722
Autor:
A.P. Litovchenko, W. Wahl, G.G. Shmatko, J. Wyss, M. B. Pinkovska, A. A. Groza, V. I. Khivrich, M. I. Starchik, V. I. Varnina, P.G. Litovchenko, D. Bisello, L. A. Polivzev, A. Candelori
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 514:44-46
In silicon material with oxygen concentration in the range (4–9)×10 17 cm −3 , grown by the CZ method and irradiated by reactor neutrons, the interstitial oxygen mainly participates in A-center (V+O) creation. A-center concentration is linearly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e01ef2e04a0418e9fb83231aca6f843
https://doi.org/10.1016/j.nima.2003.08.082
https://doi.org/10.1016/j.nima.2003.08.082