Zobrazeno 1 - 10
of 24
pro vyhledávání: '"M. B. M. Rinzan"'
Publikováno v:
Nano Letters. 12:3097-3100
Terahertz technology has recently emerged as a highly sought-after and versatile scientific tool in many fields, including medical imaging, security screening, and wireless communication. However, scientific progress has been hindered by the lack of
Publikováno v:
Nanoscale Research Letters
We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO(2)/nanotube interface. We show that this type of memory device is robust, withstanding over 10(5) operating cycles, with a current drive ca
Publikováno v:
Infrared Physics & Technology. 50:199-205
The variation in spectral shape around the threshold frequencies between model and experimental responsivity spectra in heterojunction interfacial workfunction internal photoemission (HEIWIP) infrared detectors was investigated. This is attributed to
Autor:
Makarand Paranjape, M. B. M. Rinzan, Amy Y. Liu, Marcio Fontana, Anthony K. Boyd, Tristan Deppe, Paola Barbara
Publikováno v:
Scientific Reports. 5
Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombina
Publikováno v:
The European Physical Journal B - Condensed Matter and Complex Systems. 50:403-410
Reflectance measurements from p-type GaSb:Zn epitaxial films with different hole concentrations (1017–1018 cm-3) have been investigated over the frequency region of 100–1000 cm-1. A minimum broadening feature corresponding to the hole plasmon was
Publikováno v:
Journal of Applied Physics. 96:4588-4597
Design, modeling, and optimization principles for GaAs∕AlGaAs heterojunction interfacial workfunction internal photoemission (HEIWIP) infrared detectors for a broad spectral region are presented. Both n-type and p-type detectors with a single emitt
Autor:
A.B. Weerasekara, S. G. Matsik, B. Zvonkov, Mustafa Alevli, A. G. U. Perera, M. B. M. Rinzan, Margaret Buchanan, V. I. Gavrilenko, H. C. Liu
Publikováno v:
Perera, A G U, Matsik, S G, Rinzan, M B M, Weerasekara, A B, Alevli, M, Liu, H, Buchanan, M, Zvonkov, B & Gavrilenko, V I 2003, ' The effects of light-heavy hole transitions on the cutoff wavelengths of far infrared detectors ', Infrared Physics and Technology, vol. 44, no. 5/6, pp. 347-353 . https://doi.org/10.1016/S1350-4495(03)00154-3
Infrared Physics and Technology, 44(5/6), 347-353. Elsevier
Infrared Physics and Technology, 44(5/6), 347-353. Elsevier
Results are presented on the effects of doping variation on the cutoff wavelength (λc) of homojunction interfacial workfunction internal photoemission far infrared detectors. The behavior at low doping (
Publikováno v:
Esaev, D G, Matsik, S G, Rinzan, M B M, Perera, A G U, Liu, H & Buchanan, M 2003, ' Resonant cavity enhancement in heterojunction GaAs/AlGaAs terahertz detectors ', Journal of Applied Physics, vol. 93, no. 4, pp. 1879-1883 . https://doi.org/10.1063/1.1539918
Journal of Applied Physics, 93(4), 1879-1883. American Institute of Physics Publising LLC
Journal of Applied Physics, 93(4), 1879-1883. American Institute of Physics Publising LLC
The room-temperature absorption and reflection spectra in the range of 5–100 μm (3–60 THz) for multilayer heterojunction interfacial work function internal photoemission (HEIWIP) GaAs/AlGaAs far-infrared (FIR) detectors are presented. Calculated
Autor:
Amy Y. Liu, Makarand Paranjape, Marcio Fontana, Anthony K. Boyd, Paola Barbara, M. B. M. Rinzan, Tristan Deppe
Publikováno v:
Repositório Institucional da UFBA
Universidade Federal da Bahia (UFBA)
instacron:UFBA
Scientific Reports
Universidade Federal da Bahia (UFBA)
instacron:UFBA
Scientific Reports
Atomically thin MoS2 has recently emerged as a very attractive material for nanoscale optoelectronic devices. While n-type transport in MoS2 devices has been demonstrated, hole conduction has been more challenging. Here we show work-function engineer
Autor:
Sanjay Krishna, Margaret Buchanan, Greg von Winckel, S. G. Matsik, A.B. Weerasekara, A. G. U. Perera, M. B. M. Rinzan, H. C. Liu, Andreas Stintz
Publikováno v:
Optics letters. 32(10)
Terahertz detection using the free-carrier absorption requires a small internal work function of the order of a few millielectron volts. A threshold frequency of 3.2 THz (93 microm or approximately 13 meV work function) is demonstrated by using a 1 x