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pro vyhledávání: '"M. B. M. Kemp"'
Publikováno v:
Journal of Applied Physics. 70:3983-3985
A dry‐etch process for InP is developed using a mixture of Cl2, Ar, CH4, and H2. This process results in a high etch rate and good anisotropy. The induced damage is investigated by surface characterization after etching, using x‐ray photoelectron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::259e4112a046580610f09fcd203dd594
https://doi.org/10.1063/1.349165
https://doi.org/10.1063/1.349165
