Zobrazeno 1 - 10
of 20
pro vyhledávání: '"M. B. Dutt"'
Publikováno v:
Solid-State Electronics. 42:1905-1910
The effect of co-implantation of Si and Be in GaAs is discussed in the light of tailoring of a MESFET implantation profile. The modified profile is calculated by considering electrical activation and diffusion of both Si and Be in GaAs. The results c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a991880559548a4c8db9857a22d6c909
https://doi.org/10.1016/s0038-1101(98)00121-x
https://doi.org/10.1016/s0038-1101(98)00121-x
Autor:
M B Dutt, B L Sharma
Publikováno v:
Semiconductor Science and Technology. 8:433-436
An analytical model for a depletion mode MIS-type FET having a charge-depleted semiconducting layer as a barrier layer has been developed. It has been applied to two InP-based structures in which a semi-insulating Fe-doped InP layer is used as the in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d882aa3fbacf014d441a8951ee4c8ef6
https://doi.org/10.1088/0268-1242/8/3/023
https://doi.org/10.1088/0268-1242/8/3/023
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 58:39-42
Implantations of B and Ga ions in p-type Hg0.78Cd0.22Te is discussed in this paper. The variations of electron carrier concentration with depth and sheet carrier concentration with dose are presented. A novel technique for producing n+-n-p structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bad8eafd0298ada58f67e2462a97763a
https://doi.org/10.1016/0168-583x(91)95676-5
https://doi.org/10.1016/0168-583x(91)95676-5
Publikováno v:
Bulletin of Materials Science. 13:95-98
Formation of a uniformn-layer by multiple29Si+ implantation on LEC grown semi-insulating GaAs 〈100〉 substrate and its characterisation by differential Hall measurement at room temperature is reported. The implantation energies are 60, 160 and 260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76c6aa8102d175952dcb8259dec94fc1
https://doi.org/10.1007/bf02744863
https://doi.org/10.1007/bf02744863
Autor:
M. B. Dutt, B. L. Sharma
Publikováno v:
Diffusion in Semiconductors ISBN: 3540609644
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a40164dbc79270ea99f002034d76777
https://doi.org/10.1007/10426818_11
https://doi.org/10.1007/10426818_11
Autor:
M. B. Dutt, B. L. Sharma
Publikováno v:
Diffusion in Semiconductors ISBN: 3540609644
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::109f176eea491906c1cc057e0ab9fe7d
https://doi.org/10.1007/10426818_12
https://doi.org/10.1007/10426818_12
Autor:
M. B. Dutt, B. L. Sharma
Publikováno v:
Diffusion in Semiconductors ISBN: 3540609644
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d867c81e36a3b5da4c0c02253ce1c2d9
https://doi.org/10.1007/10426818_10
https://doi.org/10.1007/10426818_10
Publikováno v:
Semiconductor Science and Technology. 8:1679-1681
29Si+ implantation in InP:Fe was performed at room temperature with an energy of 150 keV at 1*1014 cm-2. Face-to-face proximity furnace annealing was done at 750 degrees C for 15 min in flowing N2 and H2. Investigations were made by measuring differe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21565ef8a2f8c735f3b8e3498117c4aa
https://doi.org/10.1088/0268-1242/8/8/032
https://doi.org/10.1088/0268-1242/8/8/032
Publikováno v:
Journal of Applied Physics. 68:5564-5566
Differential Hall measurements at 77 K were done on 150‐keV boron implanted p‐type mercury‐cadmium‐telluride (HgCdTe). n+ layers formed as a result of implantation with various doses were very sharp and thicknesses of the n+ layers were found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::247da656809c65c8e06d2d5073e37b34
https://doi.org/10.1063/1.347016
https://doi.org/10.1063/1.347016
Autor:
M. B. Dutt, B. L. Sharma
Publikováno v:
Infrared Detectors: State of the Art.
Field-effect transistors based on InP have many advantages over those based on GaAs. The major difficulty in realizing MESFETs based on InP, however, lies in low barrier height and breakdown voltage of Schottky gate. To overcome this, a pseudomorphic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73f8472809f0c4a05d7d14d68c0417e5
https://doi.org/10.1117/12.138631
https://doi.org/10.1117/12.138631