Výsledky vyhledávání

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Molecular linkage map for an intraspecific recombinant inbred population of durum wheat (Triticum turgidum L. var. durum)

Autor: A. Pagnotta, E. Iacono, A. El Saleh, Mark E. Sorrells, O. A. Tanzarella, A. Asbati, Enrico Porceddu, David Benscher, H. Hazzam, M. M. Nachit, M. Labhilili, M. Azrak, M. Khairallah, Jean-Marcel Ribaut, I. Elouafi

Publikováno v: Theoretical and Applied Genetics. 102:177-186

Durum wheat (Triticum turgidum L. var. durum) is an economically and nutritionally important cereal crop in the Mediterranean region. To further our understanding of durum genome organization we constructed a durum linkage map using restriction fragm

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d27e9a1638d4e77b9257e3ec38cf2fc8
https://doi.org/10.1007/s001220051633

Zobrazit plný text záznamu

Detection and depth profiling of 19F using a resonance at 2313 keV in the 19F(α,p)22Ne nuclear reaction

Autor: M.D. Ashbaugh, L.C. McIntyre, Rich Gregory, J. Wetzel, John O. Stoner, J. Borgardt, M. Azrak

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :528-532

Cross section measurements are reported for the p0 and p1 proton groups from the 19F(α,p)22Ne nuclear reaction in the energy range 2150–2520 keV at a reaction angle of 135°. A narrow resonance at 2313 keV incident energy is shown to be useful in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::30d5d32aec97eac72d84ef67f1165f20
https://doi.org/10.1016/s0168-583x(97)00737-4

Zobrazit plný text záznamu

1-D and 2-D Geometry Effects in Uniaxially-Strained Dual Etch Stop Layer Stressor Integrations

Autor: M. Jahanbani, Jon D. Cheek, N. Cave, S.j. Lian, Konstantin V. Loiko, Mehul D. Shroff, Chi-Hsi Wu, Stanley M. Filipiak, Xiang-Zheng Bo, H.C. Tuan, M. Azrak, Paul A. Grudowski, Wen-Jya Liang, Vance H. Adams, Sinan Goktepeli, Venkat R. Kolagunta, M. Foisy, John J. Hackenberg

Publikováno v: 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

We report, for the first time, on the 2D boundary effects in a high performance 65nm SOI technology with dual etch stop layer (dESL) stressors. 1D geometry effects, such as poly pitch dependence, and the implications on SPICE models and circuit desig

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::33649abd039e0c65218d78c61cea5101
https://doi.org/10.1109/vlsit.2006.1705217

Zobrazit plný text záznamu

Metal gate MOSFETs with HfO/sub 2/ gate dielectric

Publikováno v: 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

We report for the first time electrical characterization of HfO/sub 2/ p- and n-MOSFETs with CVD TiN and PVD TaSiN gates respectively fabricated using conventional CMOS integration. Their performance is compared to PVD TiN-gated HfO/sub 2/ and SiO/su

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ba8e49c7a4782265a3bd499bd62e2e9c
https://doi.org/10.1109/vlsit.2002.1015373

Zobrazit plný text záznamu

80 nm poly-Si gate CMOS with HfO/sub 2/ gate dielectric

Publikováno v: International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

We report here for the first time the formation of an amorphous oxide layer between the polysilicon gate and hafnium oxide (HfO/sub 2/) gate dielectric due to a lateral oxidation mechanism at the gate edge. Using a polySi reoxidation-free CMOS proces

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c11361040807d6784fdb07f88af602dc
https://doi.org/10.1109/iedm.2001.979592

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání