Zobrazeno 1 - 10
of 33
pro vyhledávání: '"M. Azizar Rahman"'
Publikováno v:
ACS Applied Electronic Materials. 4:1143-1152
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f95fbd49fcd6e4bee34e8c5350b2552
https://doi.org/10.1021/acsaelm.1c01252
https://doi.org/10.1021/acsaelm.1c01252
Green luminescence (GL) of ZnO is a typical defect emission and an important research topic for defect-controlling engineering. Two kinds of spectral characteristics, namely, Gaussian GL (GGL) and fine-structure GL (FSGL), are designated from a varie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ee4a8da5f24f10c636499db2f698b60
https://hdl.handle.net/10453/166226
https://hdl.handle.net/10453/166226
Autor:
Shuangpeng Wang, M. Azizar Rahman, Kaimin Shih, Jingyang Lin, Cuong Ton-That, Francis Chi-Chung Ling, Caiqin Luo, Ho Won Tam, Aleksandra B. Djurišić, Matthew R. Phillips, Changzhong Liao
Publikováno v:
Applied Surface Science. 483:1129-1135
We demonstrate a simple and inexpensive method of surface polarity control of ZnO grown by pulsed laser deposition (PLD). The polarity control is achieved in a straightforward way by changing the thickness of MgO buffer layer. The Zn- and O-polar ZnO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43c5db2678dbc0594e56cdda98c99c03
https://doi.org/10.1016/j.apsusc.2019.03.228
https://doi.org/10.1016/j.apsusc.2019.03.228
Autor:
M. Mozibur Rahman, M. Azizar Rahman, M. S. Hossain, M. Kamruzzaman, A.M.M. Tanveer Karim, M. K. R. Khan
Publikováno v:
Journal of Materials Science. 54:11818-11826
The mixed halide CH3NH3PbI3−xClx crystalline thin film has been prepared by two-step solution-processed repeated dip coating method at an ambient atmosphere. X-ray diffraction study reveals the presence of tetragonal and cubic phases in deposited f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec59e99ec96b6aa6544ea1b19f57f12f
https://doi.org/10.1007/s10853-019-03740-0
https://doi.org/10.1007/s10853-019-03740-0
In recent years, there has been resurgent interest in ZnO due to its efficient UV emission and potential application in opto-electronic devices. The problem of self-compensating defects, especially those related to acceptor-like dopants, remains a ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3e6c9ce006212ffd7c09cab1e63deb7
https://hdl.handle.net/10453/142655
https://hdl.handle.net/10453/142655
Publikováno v:
Journal of Alloys and Compounds. 895:162693
Multi-wavelength emission in wide bandgap semiconductors is commonly achieved through ternary alloying or quantum size effects. However, multi-wavelength emission within a single microstructure is highly challenging using these approaches. Here, we d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbf154dd87718b051639a1049d87e17d
https://doi.org/10.1016/j.jallcom.2021.162693
https://doi.org/10.1016/j.jallcom.2021.162693
Autor:
M. K. R. Khan, M. Kamruzzaman, Al Momin Md Tanveer Karim, M. Mozibur Rahman, M. Azizar Rahman, M. S. Hossain, Cuong Ton-That
Publikováno v:
ChemistrySelect. 3:6525-6530
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb414c3d61b68ba0f12538b78b9692b6
https://doi.org/10.1002/slct.201801276
https://doi.org/10.1002/slct.201801276
Publikováno v:
Journal of Alloys and Compounds. 691:339-342
Undoped and Li-doped ZnO films with bright visible luminescence have been fabricated by the spray pyrolysis technique at 400 °C. The pyrolytic films exhibit multi-coloured emissions of yellow, green and blue, which can be tuned by varying the Li con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5191bbdd416364c9076892a45706fd94
https://doi.org/10.1016/j.jallcom.2016.08.242
https://doi.org/10.1016/j.jallcom.2016.08.242
Autor:
W. Anwand, Shichen Su, Maik Butterling, Andreas Wagner, Cuong Ton-That, Matthew R. Phillips, Caiqin Luo, Francis Chi-Chung Ling, Muhammad Younas, Zilan Wang, M. Azizar Rahman
Publikováno v:
Scientific Reports
Scientific Reports 9(2019), 3534
Scientific Reports, Vol 9, Iss 1, Pp 1-10 (2019)
Scientific Reports 9(2019), 3534
Scientific Reports, Vol 9, Iss 1, Pp 1-10 (2019)
Undoped and Ga-doped ZnO films were grown on c-sapphire using pulsed laser deposition (PLD) at the substrate temperature of 600 °C. Positron annihilation spectroscopy study (PAS) shows that the dominant VZn-related defect in the as-grown undoped ZnO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42fa1a5a4c83c077abd0effab69b0801
https://doi.org/10.1038/s41598-019-40029-3
https://doi.org/10.1038/s41598-019-40029-3
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