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Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
Low energy arsenic implants used in the formation of ultra-shallow junctions are characterized on the GSD/Ultra high current ion implanter. Significant advantages in beam current and process throughput are demonstrated by using the Arsenic dimer ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d308139e6fd0e5887740e38187226868
https://doi.org/10.1109/iit.2002.1257954
https://doi.org/10.1109/iit.2002.1257954
