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of 2
pro vyhledávání: '"M. Arneen"'
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
Low energy arsenic implants used in the formation of ultra-shallow junctions are characterized on the GSD/Ultra high current ion implanter. Significant advantages in beam current and process throughput are demonstrated by using the Arsenic dimer ion
Publikováno v:
Human & Experimental Toxicology; Dec2002, Vol. 21 Issue 12, p667-674, 8p