Zobrazeno 1 - 10
of 36
pro vyhledávání: '"M. Arlery"'
Autor:
C. Pontiroli, M. Arlery
Publikováno v:
International Journal of Safety and Security Engineering. 9:38-49
Autor:
F. Widmann, Le Si Dang, Christophe Adelmann, Bruno Daudin, Nikos T. Pelekanos, M. Arlery, G. Fishman, J. Simon, Guy Feuillet, Henri Mariette, Jean-Luc Rouvière
Publikováno v:
Comptes Rendus de l'Academie des Sciences. Série IV, Physique, Astronomie
Comptes Rendus de l'Academie des Sciences. Série IV, Physique, Astronomie, 2000, 1 (1), pp.61-69. ⟨10.1016/S1296-2147(00)00105-0⟩
Comptes Rendus de l'Academie des Sciences. Série IV, Physique, Astronomie, 2000, 1 (1), pp.61-69. ⟨10.1016/S1296-2147(00)00105-0⟩
This paper reviews our studies of wurtzite GaN/AlN quantum dots grown by MBE via the Stranski–Krastanow mode. High resolution transmission electron microscopy shows that dots are dislocation free, without any evidence of interdiffusion effects. The
Publikováno v:
Journal of Crystal Growth. :142-146
With a view to understand the misfit relaxation mechanisms for binary III-nitride semiconductors, a combined RHEED and TEM study of strain accommodation for AlN/GaN, GaN/AlN and InN/GaN MBE heteroepitaxial combinations is presented. It is shown that
Autor:
Agata Kaminska, H.Y. Zuo, Sylwester Porowski, T.L. Tansley, Ewa M. Goldys, Tadeusz Suski, J. Peder Bergman, Izabella Grzegory, M. Arlery, A. Barski, V. Yu. Ivanov, Bo Monemar, Marek Godlewski, J.L. Rouvicre, U. Rossner
Publikováno v:
Materials Science Forum. :1149-1154
Publikováno v:
Materials Science and Engineering: B. 50:61-71
GaN layers grown by MOCVD or by MBE on (0001) sapphire have been characterised by transmission electron microscopy (TEM). We make a review of the different crystallographic structures found in theses GaN layers. We comment shortly on the nitridation
Autor:
Guy Feuillet, F. Widmann, Jean-Luc Rouvière, M. Arlery, Yves Samson, Christoph Adelmann, Bruno Daudin
Publikováno v:
Materials Science and Engineering: B. 50:8-11
The first stages of the growth of strained GaN on AlN were studied using reflection high energy electron diffraction, atomic force microscopy and high resolution electron microscopy. It was shown that GaN grows in the Stranski–Krastanov mode, with
Autor:
Olivier Briot, Bruno Daudin, Guy Feuillet, M. Arlery, J Schuler, F. Widmann, N. T. Pelekanos, Jean-Luc Rouvière
Publikováno v:
Materials Science and Engineering: B. 50:233-237
The epitaxial growth of both cubic and hexagonal GaN epilayers is considered here with the aim of comparing their physical properties. In particular, the growth mechanisms at the first stages of growth will be dealt with together with the quality of
Publikováno v:
Physical Review B. 56:R7069-R7072
It is demonstrated by in situ reflection-high-energy-electron-diffraction studies that the growth of hexagonal GaN on AlN occurs either purely in a layer-by-layer mode or in a Stranski-Krastanov mode, depending on the substrate temperature. Nanometri
Publikováno v:
Materials Science and Engineering: B. 43:161-166
We characterize by transmission electron microscopy (TEM), GaN layers deposited by metal organic chemical vapor deposition (MOCVD) on (0001) sapphire. Different GaN films with different surface morphologies have been observed and their crystallograph
Publikováno v:
Materials Science and Engineering: B. 43:157-160
A direct method for the determination of the polarity of (0001) wurtzite GaN films is presented, using a combination of ion channeling and convergent beam electron diffraction experiments (CBDE). The samples were grown by metal organic chemical vapor