Zobrazeno 1 - 10
of 53
pro vyhledávání: '"M. Antcliffe"'
Autor:
Patrick Fay, Bob Grabar, James M. Chappell, Peter Chen, Isaac Khalaf, Erdem Arkun, Jeong-Sun Moon, M. Antcliffe, Nivedhita Venkatesan, Joel Wong, Andrea Corrion
Publikováno v:
IEEE Electron Device Letters. 41:1173-1176
We report scaled, graded-channel AlGaN/GaN HEMTs with an extrinsic fT and fMAX of 170 GHz and 363 GHz, which is the highest in emerging graded-channel GaN HEMTs. At 50-nm gate length, the fT*Lg of 8.5 GHz $\ast \mu \text{m}$ is comparable to that of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90f58368b168bd7acd238450d1a80043
https://doi.org/10.1109/led.2020.3005337
https://doi.org/10.1109/led.2020.3005337
Autor:
Patrick Fay, Isaac Khalaf, R. Grabar, Erdem Arkun, Andrea Corrion, J. Wong, P. Chen, James M. Chappell, M. Antcliffe, Nivedhita Venkatesan, Jeong-Sun Moon
Publikováno v:
Electronics Letters. 56:678-680
The authors report on highly scaled 60 nm gate length graded-channel AlGaN/GaN high electron mobility transistors (HEMTs) with a record power added efficiency (PAE) of 75% at 2.1 W/mm power density at Vdd = 10 V and the PAE of 65% at 3.0 W/mm power d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5d8f476a091c4ad405d86cde542bba1
https://doi.org/10.1049/el.2020.0281
https://doi.org/10.1049/el.2020.0281
Autor:
Erdem Arkun, Andrea Corrion, Joel Wong, James M. Chappell, Nivedhita Venkatesan, Peter Chen, Isaac Khalaf, M. Antcliffe, Chuong Dao, Patrick Fay, Bob Grabar, Jeong-Sun Moon
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
We report high-speed graded-channel GaN HEMTs with 10 dB OIP3 improvement over current conventional AlGaN/GaN HEMTs at the same DC power. Thus, the graded-channel GaN HEMTs demonstrated a record OIP3/Pdc of 17 - 20 dB at 30 GHz. Also, these graded-ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddeba47d19bee9aae925aecc52463a0f
https://doi.org/10.1109/ims30576.2020.9223775
https://doi.org/10.1109/ims30576.2020.9223775
Publikováno v:
Electronics Letters. 54:657-659
Highly scaled 90 nm gate-length field-plated (FP) aluminium gallium nitride (GaN)/GaN high electron mobility transistors (HEMTs) with a record current gain cut-off frequency (f T) of 95 GHz and maximum oscillation frequency (f MAX) of 200 GHz is repo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7afa076f08d294661769dbf7849c8b38
https://doi.org/10.1049/el.2018.0417
https://doi.org/10.1049/el.2018.0417
Autor:
Issac Khalaf, M. Antcliffe, Erdem Arkun, Peter Chen, Jeong-Sun Moon, Andrea Corrion, Bob Grabar, Joel Wong
Publikováno v:
2019 14th European Microwave Integrated Circuits Conference (EuMIC).
We report the first demonstration of graded-channel GaN HEMTs operating in the millimeter-wave frequency range. At 30 GHz, these graded-channel GaN HEMTs demonstrated excellent PAE of 72% at associated power density of 2 W/mm. The measured PAE and ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::325034878596af4fec583412de42c521
https://doi.org/10.23919/eumic.2019.8909437
https://doi.org/10.23919/eumic.2019.8909437
Autor:
Peter Chen, Jeong-Sun Moon, Isaac Khalaf, Joel Wong, Taylor Post, Bob Grabar, Andrea Corrion, Erdem Arkun, M. Antcliffe
Publikováno v:
2019 IEEE MTT-S International Microwave Symposium (IMS).
We report the first demonstration of graded-channel GaN HEMTs operating in the millimeter-wave frequency range. At 30 GHz, these graded-channel GaN HEMTs demonstrated excellent PAE of 65% at an associated power density of 3 W/mm. The measured PAE and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44b1439e02a8e4c08bd3fdd33d558f68
https://doi.org/10.1109/mwsym.2019.8700832
https://doi.org/10.1109/mwsym.2019.8700832
Autor:
Baohua Yang, Kyung-Ah Son, D. Wong, Song Hyok Jae, Dustin Le, M. Antcliffe, Helen Fung, Hwa-Chang Seo, Jeong-Sun Moon, C. McGuire, Adele E. Schmitz, Jongchan Kang
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 5:344-350
We report millimeter-wave and sub-terahertz detection using graphene FETs up to 220 GHz at zero-bias to reduce $1/f $ noise. Detection leveraged the nonlinearity of the channel resistance through resistive field-effect transistor mixing for high-dyna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::029e3416fd5d44e96f94a2e37d78d980
https://doi.org/10.1109/tthz.2015.2414297
https://doi.org/10.1109/tthz.2015.2414297
Autor:
Peter W. Pairaudeau, Aderonke A. Adeniji, Jan M. Antcliffe, Alison Purcell, C. Sinha, Lorraine Pearson, Susan Tutty, Stephen W. Lindow
Publikováno v:
Drug and Alcohol Review. 29:189-192
Introduction and Aims. The fact that particular parents suffer afflictions limiting their ability to care does not mean that they should automatically be deemed unsuitable parents. Prompted by neonatal team concerns about child-care issues, a local m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f13297431bbeed20b204c1a7e1d45e2
https://doi.org/10.1111/j.1465-3362.2009.00131.x
https://doi.org/10.1111/j.1465-3362.2009.00131.x
Autor:
Jeong-Sun Moon, Miroslav Micovic, P. Willadson, Paul Hashimoto, M. Antcliffe, C. McGuire, D. Wong, M. Hu
Publikováno v:
IEEE Electron Device Letters. 29:834-837
We report small- and large-signal performances of 140-nm gatelength field-plated GaN HEMTs at Ka-band frequencies, in which the GaN HEMTs were fabricated with n+ source contact ledge. The parasitic channel resistance is reduced by ~ 50%, whereas the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98213c330e4f594c0b38e6dabd7a5749
https://doi.org/10.1109/led.2008.2000792
https://doi.org/10.1109/led.2008.2000792
Autor:
Peter M. Asbeck, Virginia D. Wheeler, Kangmu Lee, Richard S. Ross, Jeong S. Moon, Fred Stratan, Adele E. Schmitz, Hwa-Chang Seo, D. Kurt Gaskill, M. Antcliffe, Andrey A. Kiselev, Luke O. Nyakiti
Publikováno v:
IEEE Electron Device Letters. 34:1190-1192
We report the first experimental demonstration of a lateral graphene heterostructure field-effect transistor (HFET) at wafer scale, where the graphene heterostructure channel consists of epitaxial graphene (Gr)/fluorographene (GrF)/graphene (Gr). GrF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70812029bd33860a47da003474b5535d
https://doi.org/10.1109/led.2013.2270368
https://doi.org/10.1109/led.2013.2270368