Zobrazeno 1 - 10
of 123
pro vyhledávání: '"M. Angyal"'
Autor:
V. Vidya, N. Zamdmer, T. Mechler, K. Onishi, D. Chidambarrao, B. W. Jeong, Y. G. Ko, C. H. Lee, J. Sim, M. Angyal, E. Crabbe
Publikováno v:
2023 35th International Conference on Microelectronic Test Structure (ICMTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b5ee311313c360d3812fbe0d44d6d15
https://doi.org/10.1109/icmts55420.2023.10094206
https://doi.org/10.1109/icmts55420.2023.10094206
Autor:
C.H. Lee, B.W. Jeong, S. Wu, M. Kim, X. Chen, K. Onishi, C. Manya, L. Anastos, J. Sim, M. Angyal
Publikováno v:
2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::196ba4886f11eac2108cdb3c3c7b80c4
https://doi.org/10.1109/icmts50340.2022.9898262
https://doi.org/10.1109/icmts50340.2022.9898262
Akademický článek
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Akademický článek
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Publikováno v:
Rechtsmedizin. 9:141-144
Aus der Summe der in der Praxis zur Verfugung stehenden Methoden zur rechtsmedizinischen Personenidentifikation untersuchten die Verfasser die Vorteile der radiologischen Identifizierungsmoglichkeiten unter radiologischen Bedingungen sowie deren Gren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::894cde5abeb377d6188c1243c6ede156
https://doi.org/10.1007/s001940050097
https://doi.org/10.1007/s001940050097
Publikováno v:
International Journal of Legal Medicine. 108:150-153
Suicidal deaths which occurred in Baranya County, Hungary between 1983 and 1987 were investigated with regard to biodemographical aspects. The number of suicidal deaths for this period was 1056 and the rate for this region was higher in villages than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44db5efc0b96d2842d3022f8b3a54894
https://doi.org/10.1007/bf01844827
https://doi.org/10.1007/bf01844827
Autor:
C.-K. Hu, M. Angyal, B. C. Baker, G. Bonilla, C. Cabral, D. F. Canaperi, S. Choi, L. Clevenger, D. Edelstein, L. Gignac, E. Huang, J. Kelly, B. Y. Kim, V. Kyei-Fordjour, S. L. Manikonda, J. Maniscalco, S. Mittal, T. Nogami, C. Parks, R. Rosenberg, A. Simon, Y. Xu, T. A. Vo, C. Witt, Ehrenfried Zschech, Shinichi Ogawa, Paul S. Ho
Publikováno v:
AIP Conference Proceedings.
The impact of the existence of Cu grain boundaries on the degradation of Cu interconnect lifetime at the 45 nm technology node and beyond has suggested that improved electromigra‐tion in Cu grain boundaries has become increasingly important. In thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e93a7cbb44deb392eee5feab455cf7d3
https://doi.org/10.1063/1.3527138
https://doi.org/10.1063/1.3527138
Autor:
Anda Mocuta, M. Angyal, An L. Steegen, Vidhya Ramachandran, T. Hook, Dan Moy, Douglas D. Coolbaugh, Percy V. Gilbert
Publikováno v:
2007 IEEE International Electron Devices Meeting.
A common platform technology at 65 nm is described. The platform consists of a low-power CMOS base technology with a broad menu of optional features including high- performance passive devices, standard cell libraries, SRAM compilers and a process de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8393053c3c2a00dca5a348521288a69
https://doi.org/10.1109/iedm.2007.4418917
https://doi.org/10.1109/iedm.2007.4418917
Autor:
S. Subbanna, Huilong Zhu, T. Shinohara, R.-V. Bentum, H. Kuroda, C. Penny, Jay W. Strane, D. McHerron, D. Harmon, D. Zamdmer, Q. Ye, Yoshiaki Toyoshima, Paul D. Agnello, S. Wu, G. Freeman, L. Tsou, Atsushi Azuma, Scott J. Bukofsky, Carl J. Radens, M. Angyal, M. Fukasawa, Effendi Leobandung, Byeong Y. Kim, M. Gerhardt, Y. Tan, L. Su, Tenko Yamashita, Anda Mocuta, I.C. Inouc, Takeshi Nogami, Scott D. Allen, R. Logan, K. Miyamoto, Shih-Fen Huang, Ravikumar Ramachandran, J. Pellerin, A. Ray, Siddhartha Panda, Christine Norris, H.V. Meer, H. Nayakama, Mizuki Ono, Keith Jenkins, J. Heaps-Nelson, Wenjuan Zhu, D. Ryan, Michael A. Gribelyuk, B. Dirahoui, M. Inohara, E. Nowak, I. Melville, S. Lane, T. Ivers, K. Ida, Scott Halle, Ishtiaq Ahsan, M.-F. Ng, Huicai Zhong, H. Harifuchi, S.-K. Ku, N. Kepler, F. Wirbeleit, Emmanuel F. Crabbe, H. Yan, T. Kawamura, Mahender Kumar, A. Nomura, L. K. Wang, F. Sugaya, H. Hichri, Gary B. Bronner, P. O'Neil, K. Miyashita, Michael P. Belyansky, J. Cheng, S.-H. Rhee, Lars W. Liebmann, D. Yoneyama, Dan Mocuta, K. McStay, G. Sudo, Dureseti Chidambarrao
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
A high performance 65 nm SOI CMOS technology is presented featuring 35 nm gate length, 1.05 nm gate oxide, performance enhancement from dual stress nitride liners (DSL), and 10 wiring levels with low-k dielectric offered in the first 8 levels. DSL en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19c3a590b7034d81db7315743b8ecea4
https://doi.org/10.1109/.2005.1469238
https://doi.org/10.1109/.2005.1469238
Autor:
Chelsea Dang, A. Nghiem, Reena Tiwari, John Mendonca, W. Clark, Percy V. Gilbert, John L. Sturtevant, A. Das, E. Park, T. Sparks, H. De, T. McNelly, S. Veeraraghavan, E. Banks, B. Chu, M. Angyal, M. Kling, Mousumi Bhat, M. Woods, K. McGuffin, F. Huang, C. Feng, D. Rose, C. Pettinato, I. Yang, F. Nkansah, C. Fu, T. VanGompel, B. Boeck, K. Lucas, B. Roman
Publikováno v:
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
A high performance 0.10 /spl mu/m gate length CMOS technology has been developed with six levels of scaled copper interconnects. Transistors of 0.10 /spl mu/m-0.13 /spl mu/m gate length with physical 3 nm gate oxides and 0.175 /spl mu/m local interco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79dec60530715b8b7f84228f3c6045c1
https://doi.org/10.1109/iedm.1998.746526
https://doi.org/10.1109/iedm.1998.746526