Zobrazeno 1 - 10
of 52
pro vyhledávání: '"M. Amiotti"'
Publikováno v:
International Journal of Applied Earth Observations and Geoinformation, Vol 93, Iss , Pp 102197- (2020)
Designing and validating digital soil mapping (DSM) techniques can facilitate precision agriculture implementation. This study generates and validates a technique for the spatial prediction of soil properties based on C-band radar data. To this end,
Externí odkaz:
https://doaj.org/article/d6ffb4e0d764482092da69dee293e2bc
Autor:
S. Tominetti, M. Amiotti
Publikováno v:
Proceedings of the IEEE. 90:540-558
Getters play a crucial role in solution of the main technical issues on the way to commercial exploitation of new flat-panel technologies: packaging, reliability and lifetime. The production steps of flat-panel displays (FPDs) often include a long ba
Publikováno v:
Semiconductor Science and Technology. 10:492-499
Two sets of GaInAs/InP lattice-matched superlattices containing 30 periods, with a wide range of barrier and well thicknesses, were grown on (100) InP substrates by metal organic vapour phase epitaxy, using growth interruptions for interface optimiza
Publikováno v:
Materials Science and Engineering: B. 28:337-340
We used far-IR reflectance spectra to characterize a series of Ga 0.53 In 0.47 As/InP multiple quantum well and superlattices grown by metal-organic vapour phase epitaxy on InP:S substrates, with well widths ranging from 10 to 92 A and barriers from
Autor:
M. Amiotti, G. Landgren, Giorgio Guizzetti, Luciano Colombo, A. Borghesi, A. Piaggi, Maddalena Patrini
Publikováno v:
Journal of Applied Physics. 75:3085-3088
We measured room‐temperature reflectivity in the far‐infrared region (100–700 cm−1) of In1−xGaxAsyP1−y films grown by metalorganic phase epitaxy on InP substrate. The actual As content of the quaternary alloy (ranging from y=0.29 to y=1)
Autor:
M. Amiotti, G. Landgren
Publikováno v:
Journal of Applied Physics. 73:2965-2971
There is a definite need for accurate, but simple techniques for evaluation of refractive index and thickness of epitaxial In(1−x)GaxAsyP(1−y) films on InP. By ellipsometry, one can obtain these quantities for a transparent film on a substrate by
Publikováno v:
Materials Science and Engineering: B. 18:122-128
Edge-defined film-fed grown polycrystalline silicon sheets are known to contain carbon impurities in a state of extremely high supersaturation. During very rapid growth, carbon is incorporated with an unusually high effective segregation coefficient
Publikováno v:
Journal of Crystal Growth. 124:541-546
We have studied the effect of growth interruptions on the optical and structural quality of 30 period GainAs/GaInAsP (l = 1.3 μm) superlattices grown by metal organic vapour phase epitaxy. A photoluminescence linewidth of 6.0 meV at 6 K and satellit
Publikováno v:
Applied Physics A Solids and Surfaces. 54:181-185
WSi2 polycrystalline films of different thicknesses were prepared by low pressure chemical vapor deposition on silicon wafers, and their crystallization properties were studied as a function of the annealing temperature. Structural measurements were
Publikováno v:
Applied Surface Science. 53:230-236
We performed optical reflectivity measurements on the whole spectral range from 0.01 up to 6 eV and ellipsometric spectral measurements in the range 1.4–5 eV on the three isoelectronic and isocrystalline metal disilicides VSi 2 , NbSi 2 and TaSi 2