Zobrazeno 1 - 10
of 13
pro vyhledávání: '"M. Alper Sahiner"'
Publikováno v:
Journal of Non-Crystalline Solids. 354:399-403
A series of 1.4, 1.8, and 4.0 nm thick HfO 2 films deposited on Si(1 0 0) substrates have been measured by extended X-ray absorption fine-structure prior to anneal processing, following a standard post deposition anneal of 700 °C for 60 s in NH 3 am
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96277fdd565fba8c0fa59714be6f12ac
https://doi.org/10.1016/j.jnoncrysol.2007.07.050
https://doi.org/10.1016/j.jnoncrysol.2007.07.050
Publikováno v:
Microelectronics Journal. 36:522-526
Characterization of the inactive clusters formed by high dose implantation silicon are one of the crucial topics in the semiconductor industry. Analytical techniques, which could provide quantitative information on the detailed description of the com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7741f0f6f91cfb3551cdeffba2d06a4b
https://doi.org/10.1016/j.mejo.2005.02.095
https://doi.org/10.1016/j.mejo.2005.02.095
Autor:
M. Alper Sahiner
Publikováno v:
Complex Plasmas ISBN: 9783319054360
Extended X-ray-Absorption Fine-Structure Spectroscopy (EXAFS) has been used to investigate the subtle local structural variations in plasma deposited semiconductors. Grazing incidence geometry EXAFS is a very effective tool to study the surface layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4301e7b1396c9ab73af20dffc8ebbcbb
https://doi.org/10.1007/978-3-319-05437-7_9
https://doi.org/10.1007/978-3-319-05437-7_9
Publikováno v:
MRS Proceedings. 1118
The local structure around the manganese atom is probed by extended x-ray absorption spectroscopy (EXAFS) measurements in pulsed laser deposited thin films of La11xCaxMnO3 (x=0.1210.53). The thin films were deposited on various single crystal oxide s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da102c6c1c10a1967ebc5927dafd0b15
https://doi.org/10.1557/proc-1118-k05-06
https://doi.org/10.1557/proc-1118-k05-06
Autor:
D. De Salvador, Gabriele Bisognin, Malcolm S. Carroll, M. Alper Sahiner, Y. S. Suh, Roland A. Levy
Publikováno v:
MRS Proceedings. 891
The effect of increasing boron or phosphorus implant dose (i.e., 5×1013-5×1016 cm−2) and subsequent annealing (400-600°C for 3 hrs in N2) on the activation, diffusion and structure of germanium is studied in this work. The peak concentration of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9cd6dbcb24ccbf519e8f223c5d1499e
https://doi.org/10.1557/proc-0891-ee07-20
https://doi.org/10.1557/proc-0891-ee07-20
Autor:
Steven W. Novak, M. Alper Sahiner, Malcolm S. Carroll, Charles W. Magee, Joseph C. Woicik, P. H. Ansari
Publikováno v:
MRS Proceedings. 810
The local structural information around the germanium atom in boron doped SiGe alloys is important in understanding the dopant diffusion mechanisms. Epitaxial SiGe test structures with B and C markers were grown on Si substrates by using rapid therma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efccc35a65bcc545ae575ff7846f6a52
https://doi.org/10.1557/proc-810-c11.10
https://doi.org/10.1557/proc-810-c11.10
Publikováno v:
MRS Proceedings. 792
Cluster formation in high dose B, BF2 implanted Si wafers is an important problem in silicon doping, since it is one of the leading causes of the electrical deactivation of the dopant. In this study, we used Ge pre-amorphized, ultra low energy B and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4eb7da18c48edbd8835b8afd0145213b
https://doi.org/10.1557/proc-792-r7.3
https://doi.org/10.1557/proc-792-r7.3
Publikováno v:
MRS Proceedings. 717
New, non-routine metrology issues are addressed for three kinds of materials and processes that are necessary for the fabrication of ultra-high speed devices. We look at the problems and solutions for measuring both stoichiometry and dopant content o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4e55680aa4b742bbfd48e345bce1da7
https://doi.org/10.1557/proc-717-c6.1/b9.1
https://doi.org/10.1557/proc-717-c6.1/b9.1
Autor:
M. Alper Sahiner, Peter B. Griffin, Yayoi Takamura, Steven W. Novak, James D. Plummer, Joe C. Woicik
Publikováno v:
MRS Proceedings. 717
One of the important challenges in semiconductor industry is to sustain high concentration of dopant atoms electrically active in very small areas. In investigating the optimum post implantation treatment methods that will help to attain these condit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae6ba1d28140df9036b97fe0e79e20bd
https://doi.org/10.1557/proc-717-c3.6
https://doi.org/10.1557/proc-717-c3.6
Publikováno v:
Applied Physics Letters. 91:122910
Atomic layer deposited HfO2 films on Si(100) substrates have been measured by extended x-ray absorption fine-structure (EXAFS), pre- and postanneal processing. Analysis of the second coordination shell indicates an increase in atomic order with incre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba1ff4b755160a83f5194d3b976578a0
https://doi.org/10.1063/1.2789180
https://doi.org/10.1063/1.2789180