Zobrazeno 1 - 10
of 138
pro vyhledávání: '"M. Allegrezza"'
Publikováno v:
Chemical Communications. 59:1241-1243
Correction for ‘Dearomatization of benzopyrylium triflates with sulfoxonium ylides’ by Alexandria N. Leveille et al., Chem. Commun., 2022, 58, 12600–12603, https://doi.org/10.1039/D2CC02023H.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8ab135ebb00ef71f0a03622c74565bd
https://doi.org/10.1039/d3cc90024j
https://doi.org/10.1039/d3cc90024j
Akademický článek
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Akademický článek
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Autor:
S. Bagella, D. Viciani, M. Vidali, D. Gigante, R. Bolpagni, M. Villani, A. T. R. Acosta, M. Adorni, M. Aleffi, M. Allegrezza, C. Angiolini, S. Assini, G. Bonari, M. Bovio, F. Bracco, G. Brundu, G. Buffa, M. Caccianiga, L. Carnevali, S. Ceschin, G. Ciaschetti, A. Cogoni, V. Di Cecco, B. Foggi, A. R. Frattaroli, P. Genovesi, R. Gentili, L. Lazzaro, M. Lonati, F. Lucchese, A. Mainetti, M. Mariotti, P. Minissale, B. Paura, M. Pellizzari, E. V. Perrino, G. Pirone, L. Poggio, L. Poldini, S. Poponessi, I. Prisco, F. Prosser, M. Puglisi, L. Rosati, A. Selvaggi, L. Sottovia, G. Spampinato, A. Stanisci, A. Stinca, R. Venanzoni, L. Lastrucci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3668::630331e0fd648437a5dfde33a6f4d132
https://hdl.handle.net/11590/358702
https://hdl.handle.net/11590/358702
Autor:
D. Gigante, A. Selvaggi, A. T. R. Acosta, M. Adorni, M. Allegrezza, C. Angiolini, S. Armiraglio, S. Assini, F. Attorre, S. Bagella, M. Barcella, G. Bazan, A. Bertacchi, R. Bolpagni, G. Bonari, G. Buffa, M. Caccianiga, C. Cacciatori, M. C. Caria, S. Casavecchia, L. Casella, B. E. L. Cerabolini, G. Ciaschetti, D. Ciccarelli, A. Cogoni, M. Cutini, M. De Sanctis, W. De Simone, S. Del Vecchio, V. Di Cecco, L. Di Martino, M. Di Musciano, E. Fantinato, L. Filesi, B. Foggi, L. Forte, A. R. Frattaroli, D. Galdenzi, C. Gangale, L. Gianguzzi, G. Giusso Del Galdo, A. Grignetti, R. Guarino, C. Lasen, F. Maneli, C. Marcenò, M. G. Mariotti, G. Oriolo, B. Paura, E. Perrino, S. Pesaresi, G. Pezzi, S. Pisanu, S. Poponessi, I. Prisco, M. Puglisi, G. Rivieccio, S. Sciandrello, G. Spampinato, A. Stinca, S. Strumia, F. Taffetani, G. Tesei, V. Tomaselli, R. Venanzoni, D. Viciani, M. Villani, R. Wagensommer, K. Zanatta, P. Angelini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3977::7a4979d25649c904ce57129debeb69f8
http://hdl.handle.net/11591/430354
http://hdl.handle.net/11591/430354
Autor:
Giulio Paolo Veronese, M. Allegrezza, E. Centurioni, Caterina Summonte, Mariaconcetta Canino, Rita Rizzoli, Luca Ortolani, Vittorio Morandi
Publikováno v:
Solar energy materials and solar cells 138 (2015): 35–40. doi:10.1016/j.solmat.2015.02.026
info:cnr-pdr/source/autori:G.P.Veronese, M.Allegrezza, M.Canino, E.Centurioni, L.Ortolani, R.Rizzoli, V. Morandi, C.Summonte/titolo:Graphene as transparent conducting layer for high temperature thin film device applications/doi:10.1016%2Fj.solmat.2015.02.026/rivista:Solar energy materials and solar cells/anno:2015/pagina_da:35/pagina_a:40/intervallo_pagine:35–40/volume:138
info:cnr-pdr/source/autori:G.P.Veronese, M.Allegrezza, M.Canino, E.Centurioni, L.Ortolani, R.Rizzoli, V. Morandi, C.Summonte/titolo:Graphene as transparent conducting layer for high temperature thin film device applications/doi:10.1016%2Fj.solmat.2015.02.026/rivista:Solar energy materials and solar cells/anno:2015/pagina_da:35/pagina_a:40/intervallo_pagine:35–40/volume:138
The use of graphene as transparent conducting layer in devices that require high temperature processing is proposed. The material shows stability upon thermal treatments up to 1100 °C if capped with a sacrificial silicon layer. The use of Cu foil or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e05c0484b5fdbfbf4b8500eb3292f6eb
https://doi.org/10.1016/j.solmat.2015.02.026
https://doi.org/10.1016/j.solmat.2015.02.026
Autor:
Mariaconcetta Canino, M. Bellettato, Caterina Summonte, Martina Perani, M. Allegrezza, Daniela Cavalcoli
Publikováno v:
Solar energy materials and solar cells 135 (2015): 29–34. doi:10.1016/j.solmat.2014.09.022
info:cnr-pdr/source/autori:Perani M.; Cavalcoli D.; Canino M.; Allegrezza M.; Bellettato M.; Summonte C./titolo:Electrical properties of silicon carbide%2Fsilicon rich carbide multilayers for photovoltaic applications/doi:10.1016%2Fj.solmat.2014.09.022/rivista:Solar energy materials and solar cells/anno:2015/pagina_da:29/pagina_a:34/intervallo_pagine:29–34/volume:135
info:cnr-pdr/source/autori:Perani M.; Cavalcoli D.; Canino M.; Allegrezza M.; Bellettato M.; Summonte C./titolo:Electrical properties of silicon carbide%2Fsilicon rich carbide multilayers for photovoltaic applications/doi:10.1016%2Fj.solmat.2014.09.022/rivista:Solar energy materials and solar cells/anno:2015/pagina_da:29/pagina_a:34/intervallo_pagine:29–34/volume:135
Silicon carbide/silicon rich carbide multilayers, aimed at the formation of silicon nanodots for photovoltaic applications, have been studied. The electrical properties have been investigated at the nano-scale by conductive Atomic Force Microscopy (c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00d646ff3c7c5005153b7c981a641c12
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Autor:
C. Summonte, M. Canino, M. Allegrezza, M. Bellettato, A. Desalvo, R. Shukla, b, I.P. Jain, I. Crupic, S. Milita, L. Ortolani, L. LópezConesa, S. Estradé, F. Peiró, B. Garrido
Publikováno v:
Materials science & engineering. B, Solid-state materials for advanced technology 178 (2013): 551–558. doi:10.1016/j.mseb.2012.10.030
info:cnr-pdr/source/autori:C. Summonte, M. Canino, M. Allegrezza, M. Bellettato, A. Desalvo, R. Shukla,b, I.P. Jain, I. Crupic, S. Milita, L. Ortolani, L. LópezConesa, S. Estradé, F. Peiró, B. Garrido/titolo:Boron doping of silicon rich carbides: Electrical properties/doi:10.1016%2Fj.mseb.2012.10.030/rivista:Materials science & engineering. B, Solid-state materials for advanced technology/anno:2013/pagina_da:551/pagina_a:558/intervallo_pagine:551–558/volume:178
info:cnr-pdr/source/autori:C. Summonte, M. Canino, M. Allegrezza, M. Bellettato, A. Desalvo, R. Shukla,b, I.P. Jain, I. Crupic, S. Milita, L. Ortolani, L. LópezConesa, S. Estradé, F. Peiró, B. Garrido/titolo:Boron doping of silicon rich carbides: Electrical properties/doi:10.1016%2Fj.mseb.2012.10.030/rivista:Materials science & engineering. B, Solid-state materials for advanced technology/anno:2013/pagina_da:551/pagina_a:558/intervallo_pagine:551–558/volume:178
Boron doped multilayers based on silicon carbide/silicon rich carbide, aimed at the formation of silicon nanodots for photovoltaic applications, are studied. X-ray diffraction confirms the formation of crystallized Si and 3C-SiC nanodomains. Fourier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb728c38eaf2638d004f6d7e9f372d7b
https://doi.org/10.1016/j.mseb.2012.10.030
https://doi.org/10.1016/j.mseb.2012.10.030
Autor:
Florian Schindler, P. Löper, Anke Witzky, Roberto Guerra, A. M. Hartel, Stefano Ossicini, Sergi Hernández, Margit Zacharias, Mariaconcetta Canino, M. Allegrezza, Manuel Schnabel, M. Bellettato, Friedemann D. Heinz, Stefan Janz, Daniel Hiller, J. López-Vidrier, Sebastian Gutsch, Blas Garrido
Publikováno v:
physica status solidi (a). 210:669-675
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88d256d14882b485c538b2fd74c40bda
https://doi.org/10.1002/pssa.201200824
https://doi.org/10.1002/pssa.201200824