Zobrazeno 1 - 10
of 316
pro vyhledávání: '"M. Al-Suleiman"'
Autor:
Yousif A Alqahtani, Ikram ul Haq Chaudhry, Makhdomi Kr, Ahsan Cheema, Chaudhry Aqeel, Sama M Al Suleiman, Zahra Alhaji
Publikováno v:
Journal of Surgery and Research.
Nuss procedure, also known as minimally invasive repair of pectus excavatum (MIRPE), is a standard practice in modern surgery. Although initially, this procedure was recommended for the younger age group but nowadays, surgeons also practice in the ol
Publikováno v:
Science of Advanced Materials. 7:2523-2527
Autor:
Arne Behrends, W. Schmunk, Johannes Ledig, Helmut Hofer, Andreas Waag, Ana Maria Racu, Andrey Bakin, Stefan Kück, M. Al-Suleiman, Silke Peters
Publikováno v:
physica status solidi c. 9:1024-1027
In this work we report on the optical investigation of Zn doped GaN films fabricated by metal organic chemical vapor deposition. The samples show bright emission in the blue spectral range around 2.9 eV when Si codoping is provided. This emission is
Autor:
Robert Walter, M. Al-Suleiman, Martin Strassburg, Hans-Jürgen Lugauer, Arne Behrends, Andreas Weimar, Alexander Wagner, Andrey Bakin, Andreas Waag
Publikováno v:
physica status solidi (a). 209:708-713
Transparent conductive oxides (TCOs) are used for a variety of different applications, e.g., in solar cells and light emitting diodes (LEDs). Mostly, sputtering is used, which often results in a degradation of the underlying semiconductor material. I
Autor:
Xue Wang, Stephan Merzsch, Hergo-Heinrich Wehmann, Jiandong Wei, Martin Strassburg, Andreas Waag, M. Al-Suleiman, S. Fuendling, Werner Bergbauer, Shunfeng Li
Publikováno v:
Crystal Growth & Design
The influence of polarity during the MOVPE growth of GaN based sub-micrometer (sub-μm) rods has mostly been neglected up to now. In this paper we demonstrate that the surface polarity plays a crucial role for the morphology of the GaN sub-μm rods.
Autor:
Shunfeng Li, Andreas Waag, Henning Riechert, Achim Trampert, Uwe Jahn, Arne Behrends, Jonas Lähnemann, Sönke Fündling, Stephan Merzsch, Ü. Sökmen, M. Al-Suleiman, Hergo-Heinrich Wehmann, Andrey Bakin
Publikováno v:
physica status solidi (b). 247:2315-2328
GaN and ZnO are both wide band gap semiconductors with interesting properties concerning optoelectronic and sensor device applications. Due to the lack or the high costs of native substrates, alternatives like sapphire, silicon, or silicon carbide ar
Autor:
Andrey Bakin, Andreas Waag, E. Schlenker, B. Postels, Alexander Wagner, Abdelhamid El-Shaer, Arne Behrends, Vladimir Petukhov, M. Al-Suleiman
Publikováno v:
ECS Transactions. 16:107-115
An overview of our nanostructures and thin layers fabrication technologies including MOCVD, vapour phase transport, MBE, chemical growth, electrodeposition is presented. The developed technologies provide control on the nanopillar characteristics, an
Publikováno v:
Superlattices and Microstructures. 42:129-133
Wurtzite structure ZnMgO layers have been grown using radical-source molecular beam epitaxy on high-quality ZnO buffer layers grown on (0001) sapphire substrates. The thickness of the ZnO buffer layers is 300 nm, with full width at half maxim of the
Publikováno v:
physica status solidi c. 4:158-161
ZnO thin films, ZnMgO/ZnO heterostructures and ZnO nanostructures were fabricated using molecular beam epitaxy (MBE), vapour phase transport (VPT) and an aqueous chemical growth approach (ACG). The possibility to employ several fabrication techniques
Autor:
M. Al-Suleiman, Hergo-Heinrich Wehmann, Johannes Ledig, Andreas Waag, Richard Neumann, Milena Erenburg
Publikováno v:
Microelectronic Engineering. 88:3224-3226
We present a novel way for depositing material on the top surface of three-dimensional (3D) structures. This process supplies the possibility of applying a wide range of materials on the top of structures which are too high to be processed with conve