Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN

Autor: J. D. Miller, H. J. Trodahl, M. Al Khalfioui, S. Vézian, B. J. Ruck

Publikováno v: Applied Physics Letters. 122:092402

A unique bulk-origin perpendicular magnetic anisotropy (PMA) is reported in thin films of the cubic ferromagnetic semiconductor Gd xSm1− xN. PMA behavior is clearly signaled by in-vs-out-of-plane magnetic hysteresis showing out-of-plane remanence o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dde79dfbaa3bbd442b76301ab0810ef7
https://doi.org/10.1063/5.0131472

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The effect and nature of N–H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs

Autor: Khalid Hossain, N. J. Estes, Bin Wang, M. Al Khalfioui, Mathieu Leroux, Evan R. Glaser, C. R. Brown, Joseph G. Tischler, Terry Golding, Ian R. Sellers, Chase T. Ellis, V. R. Whiteside

Publikováno v: RSC Advances. 7:25353-25361

Due to its 1 eV band gap and GaAs-matched lattice constant, GaInNAs has long been considered for use in four-junction multi-junction solar cells; but, material quality issues have impeded its use in highly efficient devices. Here, we present an analy

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::14c1f9702551d929b4c53abee3365293
https://doi.org/10.1039/c7ra02900d

High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

Autor: Benjamin Damilano, Samuel Matta, Ryszard Piotrzkowski, Elzbieta Litwin-Staszewska, Mathieu Leroux, Leszek Konczewicz, Sylvie Contreras, Sandrine Juillaguet, Julien Brault, Hervé Peyre, M. Al Khalfioui

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2020, 128 (8), pp.085703. ⟨10.1063/1.5140561⟩

International audience; This paper discusses the results of high temperature resistivity and Hall effect studies of Mg-doped GaN and AlxGa1−xN epilayers (0.05

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb052d353c6f413521a87fd5f92fd77e
https://doi.org/10.1063/1.5140561

High Temperature Annealing of MBE-grown Mg-doped GaN

Autor: Benjamin Damilano, Samuel Matta, Mathieu Leroux, M. Al Khalfioui, Sylvie Contreras, Hervé Peyre, Sandrine Juillaguet, Leszek Konczewicz, Julien Brault

Publikováno v: Journal of Physics Conference Series
33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS
33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, Peking, China. pp.UNSP 012018, ⟨10.1088/1742-6596/864/1/012018⟩

In this report, are shown the results of high temperature resistivity and Hall Effect studies of Mg-doped GaN epilayers. The samples studied were grown on (0001) (c-plane) sapphire by molecular beam epitaxy and 0.5 μm GaN:Mg layers have been achieve

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba96f28038ff416db0a88288eec7ae07
https://hal.archives-ouvertes.fr/hal-01935176