Zobrazeno 1 - 10
of 40
pro vyhledávání: '"M. Aidaraliev"'
Autor:
G. N. Talalakin, S. A. Karandashev, M. A. Remennyi, M. Aidaraliev, B. A. Matveev, N. M. Stus, Nonna V. Zotova
Publikováno v:
Semiconductors. 37:927-930
Current-voltage characteristics, as well as spectral and power-current characteristics, for the emission of InAsSbP/InGaAsSb double-heterostructure diodes grown on InAs substrates were measured under forward and reverse biases in the temperature rang
Autor:
B. A. Matveev, M.A. Remennyi, N. D. Il’inskaya, N V Zotova, M. Aidaraliev, G. N. Talalakin, S. A. Karandashev, N.M. Stus
Publikováno v:
Semiconductor Science and Technology. 18:269-272
The emission of episide down bonded InAsSbP/In(Ga)As/n+-InAs and graded InAsSb(P) light-emitting diodes (LEDs) with λmax = 3.3–5.5 μm has been modified with an 'internal' Fabry–Perot cavity or bandpass filter attached to the LED with an optical
Autor:
B. A. Matveev, V. V. Shustov, Nonna V. Zotova, N. M. Stus, E. A. Kognovitskaya, G. N. Talalakin, S. A. Karandashev, M. Aidaraliev, M. A. Remennyi, V. V. Kuznetsov
Publikováno v:
Semiconductors. 36:944-949
It is reported that a Ga0.92In0.08P0.05As0.08Sb0.87 quinary solid solution, which is lattice-matched to InAs, with a band gap of 695 meV (77 K) and 640 meV (300 K) is obtained. It is demonstrated that a heterojunction of type II is realized in the In
Autor:
M. Aidaraliev, G. N. Talalakin, S. A. Karandashev, Nonna V. Zotova, N. M. Stus, B. A. Matveev, M. A. Remennyi
Publikováno v:
Semiconductors. 36:828-831
Spectral and power characteristics of light emitting diodes (LEDs) for the 3.3-to 7-µm range with GaAs LED pumping are presented. The LEDs consist of narrow-gap In(Ga)As, InAsSb(P), or InAs layers on a n +-InAs substrate (band width ∼λmax/10) or
Autor:
G. N. Talalakin, M. Aidaraliev, N. M. Stus, Nonna V. Zotova, M. A. Remennyi, S. A. Karandashev, B. A. Matveev
Publikováno v:
Semiconductors. 35:598-604
Light-emitting diodes (LEDs) based on p-n homo-and heterostructures with InAsSb(P) and InGaAs active layers have been designed and studied. An emission power of 0.2 (λ=4.3 µm) to 1.33 mW (λ=3.3 µm) and a conversion efficiency of 30 (InAsSbP, λ=4
Autor:
M. A. Remennyi, G. N. Talalakin, M. Aidaraliev, B. A. Matveev, Nonna V. Zotova, S. A. Karandashev, N. M. Stus
Publikováno v:
Semiconductors. 35:321-324
Negative luminescence (NL) at λmax=3.8 µm from reverse-biased p-InAsSbP/n-InAs diode heterostructures has been studied at temperatures of 70–180°C. The NL power increases with temperature and exceeds the power of direct-bias electroluminescence
Autor:
Nonna V. Zotova, B. A. Matveev, G. N. Talalakin, M. A. Remennyi, N. M. Stus, M. Aidaraliev, S. A. Karandashev, T. Beyer, R. Brunner
Publikováno v:
Semiconductors. 34:488-492
It is shown that an increase in the internal losses beyond the lasing threshold in the lasers based on InGaAsSb/InAsSbP double heterostructures (wavelength range λ=3.0–3.6 µm, temperature T=77 K) causes the current-related shift of the laser mode
Autor:
Nonna V. Zotova, M. A. Remennyi, N. M. Stus, G. N. Talalakin, M. Aidaraliev, S. A. Karandashev, B. A. Matveev
Publikováno v:
Semiconductors. 34:104-107
Light emitting diodes (LEDs) with λmax=3.4 and 4.3 µm (t=20°C) were studied at elevated temperatures. It is demonstrated that LEDs operating in the temperature range t=20–180°C can be described using the classical concepts of injection radiatio
Autor:
Nonna V. Zotova, N. M. Stus, B. A. Matveev, M. Aidaraliev, M. A. Remennyi, S. A. Karandashev, G. N. Talalakin
Publikováno v:
Semiconductors. 33:700-703
We report on a study characterizing internal losses and the gain in InGaAsSb/InAsSbP diode-heterostructure lasers emitting in the mid-infrared (3–4 µm). Numerical simulations of the current dependence of the intensity of spontaneous emission above
Autor:
Nonna V. Zotova, M. A. Remennyi, N. M. Stus, M. Aidaraliev, B. A. Matveev, G. N. Talalakin, S. A. Karandashev
Publikováno v:
Semiconductors. 33:200-205
It is shown that type-I or type-II heterojunctions can be formed at heterojunction boundaries, depending on the composition of the active region and/or bounding layers. This is governed by differences in the mechanisms of radiative recombination, the