Zobrazeno 1 - 10
of 62
pro vyhledávání: '"M. Agethen"'
Publikováno v:
physica status solidi (c). :922-927
Physical simulations play a major role in device development and optimization. We use ATLAS by Silvaco to perform full two dimensional physical simulations of InGaAs/InP HBTs containing a single heterojunction. We present comparisons between measured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::610c786153856ab42ed2d5bfef4ea9b5
https://doi.org/10.1002/pssc.200306227
https://doi.org/10.1002/pssc.200306227
Publikováno v:
Journal of Crystal Growth. 248:139-143
Stacked layer sequences of InP-based HBT and HEMT are of interest for today's (OC-768) and tomorrows (OC-3072, 100 Gbit Ethernet) communication standards. The better low noise performance of the HEMT can be combined with the driver capability of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8ebf37fbb26344f78c4e3a5161c6af4
https://doi.org/10.1016/s0022-0248(02)01828-6
https://doi.org/10.1016/s0022-0248(02)01828-6
Autor:
A. Brennemann, B. Schineller, P. Velling, M. Agethen, Dietmar Keiper, Michael Heuken, C. van den Berg, R.M. Bertenburg
Publikováno v:
Journal of Crystal Growth. 248:153-157
InP-based high electron mobility transistors (HEMTs) are preferable for 40 GHz applications and beyond due to their low noise figure and the achievable high frequencies. We will report on the MOVPE growth of the required epitaxial InAlAs layers using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b88d433ab37bfc37a0fa10416fbda46c
https://doi.org/10.1016/s0022-0248(02)01932-2
https://doi.org/10.1016/s0022-0248(02)01932-2
Publikováno v:
Journal of Crystal Growth. 221:722-729
We report on the applicability of a fully non-gaseous source (ngs) configuration for MOVPE growth of InAlAs/InGaAs/InP heterostructures. The ngs configuration is based on TBAs/TBP/TMAs as group-V precursors and DitBuSi/CBr4 as dopant sources. Convent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5041738ac15157923a2d9768ce44cdf7
https://doi.org/10.1016/s0022-0248(00)00807-1
https://doi.org/10.1016/s0022-0248(00)00807-1
Publikováno v:
Journal of Crystal Growth. 195:117-123
InGaP/GaAs heterostructures are grown by LP-MOVPE. The InGaP layer embedded in GaAs and both the upper and the lower interface are characterized by high resolution X-ray diffraction (HR-XRD) using the (0 0 2) reflection, which is quasi forbidden for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35140b274b80cee163dbe0c4a47d1888
https://doi.org/10.1016/s0022-0248(98)00712-x
https://doi.org/10.1016/s0022-0248(98)00712-x
Autor:
M. Agethen, Ralf Reuter, S. van Waasen, W. Brockerhoff, D. Peters, Franz-Josef Tegude, U. Auer
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 45:977-983
A new small-signal and noise-equivalent circuit for heterostructure field-effect transistors (HFET's), including the influence of impact-ionization and gate-leakage current on the electronic properties, is presented. The capability of the new model i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daa49e593e6d38e40bd1dd7453f1dfd1
https://doi.org/10.1109/22.588612
https://doi.org/10.1109/22.588612
Publikováno v:
Wiley Encyclopedia of Electrical and Electronics Engineering
The high-frequency behavior of electronic devices is of major interest in the field of research and development. Beside the typical RF device parameters, like the cutoff frequencies fT and fmax, the high-frequency noise behavior should be considered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::008b636009d1bb710be7db44b7ab747b
https://doi.org/10.1002/0471654507.eme291
https://doi.org/10.1002/0471654507.eme291
Autor:
R.M. Bertenburg, A. Brennemann, P. Velling, M. Agethen, E. Bushehri, G. Janssen, Dietmar Keiper
Publikováno v:
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).
Carbon doped InP/(InGa)As Heterostructure Bipolar Transistors (HBT) are of interest for today's (OC-768) and tomorrow's (OC-3072, 100 Gbit Ethernet, UMTS) communication standards. For a reliable fabrication of these complex radio frequency (opto-)ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e933e0567ad69301e04f14e9953ced6a
https://doi.org/10.1109/iciprm.2002.1014120
https://doi.org/10.1109/iciprm.2002.1014120
Autor:
C. van den Berg, Dietmar Keiper, A. Brennemann, P. Velling, M. Agethen, R.M. Bertenburg, G. Janssen
Publikováno v:
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).
High-frequency vertical PIN detectors with highly p-type doped InGaAs basis layer were investigated. Reducing the PIN area and series resistance together with the thickness of the undoped drift region results in f3dB corner frequencies of up to 120 G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2567a8fe7e4874b78fdea6f52e7fe992
https://doi.org/10.1109/iciprm.2002.1014607
https://doi.org/10.1109/iciprm.2002.1014607
For simulation of digital circuits realized in Direct Coupled FET Logic (DCFL) using depletion-type as well as enhancement-type Heterostructure-Field Effect Transistors (HFET) a consistent model that is able to describe both types of transistors is n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6792a809113352cc16bda3640890817
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=0037819301
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=0037819301