Zobrazeno 1 - 10
of 71
pro vyhledávání: '"M. A. Tischler"'
Publikováno v:
The Aeronautical Journal. 108:357-368
The problem of simulation models capable of predicting the aerodynamic instability of helicopter slung-load cargo containers and bluff bodies is addressed. Instability for these loads is known to depend on unsteady frequency-dependent aerodynamics, b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8fc9f8e6e97240eadad11115cd0c59b
https://doi.org/10.1017/s0001924000005170
https://doi.org/10.1017/s0001924000005170
Publikováno v:
Physical Review C. 58:2591-2594
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c08a48a92a388d07ad46eb905c9cc37
https://doi.org/10.1103/physrevc.58.2591
https://doi.org/10.1103/physrevc.58.2591
Autor:
M. A. Tischler, R. S. Newrock, Joan M. Redwing, David Mast, Jeffrey S. Flynn, Said Elhamri, M. Ahoujja, W. C. Mitchel
Publikováno v:
Journal of Electronic Materials. 27:210-214
We have experimentally determined the effective mass (m*) of GaN, the classical (τc), and quantum (τq) scattering times for a two-dimensional electron gas residing at the interface of an AlGaN/GaN heterostructure, using the Shubnikovde Haas effect.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbf4a3c63d96b4768c0f9897d5595945
https://doi.org/10.1007/s11664-998-0389-4
https://doi.org/10.1007/s11664-998-0389-4
Autor:
W. C. Mitchel, M. A. Tischler, David Mast, J. S. Flynn, Joan M. Redwing, Said Elhamri, M. Ahoujja, R. S. Newrock
Publikováno v:
Physical Review B. 57:1374-1377
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f02114f6e51bfb430fad1b3c956215da
https://doi.org/10.1103/physrevb.57.1374
https://doi.org/10.1103/physrevb.57.1374
Publikováno v:
Physics Today. 50:24-31
Silicon is at the heart of the microelectronics revolution. Its dominance over other semiconductors is intimately tied to its superior materials and processing properties and to the tremendous base of technology that has developed around it. Another
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d4ff64d7bc465372a9d216224bc7f04
https://doi.org/10.1063/1.881650
https://doi.org/10.1063/1.881650
Publikováno v:
Physical Review Letters. 77:3181-3184
The chemical potential $\ensuremath{\mu}$ of a hole layer is mapped as a function of temperature and density $p$. We present the first investigation of the crossover from the strongly interacting degenerate regime to the classical ideal gas limit. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52dd256d48e42ed3bb947bbef7ef1da0
https://doi.org/10.1103/physrevlett.77.3181
https://doi.org/10.1103/physrevlett.77.3181
Publikováno v:
Surface Science. :113-116
We report the measurement of the chemical potential of a two-dimensional hole layer in wide temperature and density ranges. Due to their heavy mass, the holes are in a regime where the ratio of Coulomb to Fermi energies r s is very high, thus facilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d31f37f500edae6ca2e8dead18415736
https://doi.org/10.1016/0039-6028(96)00345-7
https://doi.org/10.1016/0039-6028(96)00345-7
Autor:
Reuben T. Collins, M. A. Tischler
Publikováno v:
IEEE Circuits and Devices Magazine. 9:22-28
Research efforts and developments in understanding the origin of the luminescence of porous silicon are reviewed. The fundamental characteristics of porous silicon are outlined. The quantum confinement model, which is used to characterize the lumines
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0e81092c6f7231305c9453045c6d044
https://doi.org/10.1109/101.232789
https://doi.org/10.1109/101.232789