Zobrazeno 1 - 5
of 5
pro vyhledávání: '"M. A. Synitsin"'
Autor:
V. S. Sizov, M. N. Mizerov, N. V. Kryzhanovskaya, E. E. Zavarin, W. V. Lundin, A. V. Sakharov, A. F. Tsatsul’nikov, A. L. Zakgeim, Andrey E. Nikolaev, M. A. Synitsin, S. O. Usov
Publikováno v:
Semiconductors. 44:808-811
A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94e5ca5237493a4de5ac65488d4d593f
https://doi.org/10.1134/s1063782610060205
https://doi.org/10.1134/s1063782610060205
Autor:
W. V. Lundin, Andrey E. Nikolaev, A. V. Sakharov, A. F. Tsatsul’nikov, Nikolay Cherkashin, Denis Davydov, M. M. Rozhavskaya, M. A. Synitsin, S. O. Usov, M. N. Mizerov, Pavel N. Brunkov, E. E. Zavarin
Publikováno v:
Semiconductors
Semiconductors, 2012, 46 (10), pp.1281-1285. ⟨10.1134/S1063782612100168⟩
Semiconductors, 2012, 46 (10), pp.1281-1285. ⟨10.1134/S1063782612100168⟩
International audience; The results of studies of the properties of composite InGaN/GaN/InAlN heterostructures are reported. It is shown that, in the InAlN layer, there is substantial phase separation that brings about the formation of three-dimensio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c07b6d11730ae4345779353c728f4096
https://hal.archives-ouvertes.fr/hal-01736035
https://hal.archives-ouvertes.fr/hal-01736035
Autor:
W. V. Lundin, Anton E. Chernyakov, Andrey E. Nikolaev, A. V. Sakharov, A. F. Tsatsul’nikov, A. L. Zakgeim, S. O. Usov, E. E. Zavarin, M. A. Synitsin, N. V. Kryzhanovskaya, Nikolay Cherkashin, Martin Hÿtch, V. S. Sizov, E.V. Yakovlev
Publikováno v:
physica status solidi (c)
physica status solidi (c), 2011, 8 (7-8), pp.2308--2310. ⟨10.1002/pssc.201001040⟩
physica status solidi (c), Wiley, 2011, 8 (7-8), pp.2308--2310. ⟨10.1002/pssc.201001040⟩
physica status solidi (c), 2011, 8 (7-8), pp.2308--2310. ⟨10.1002/pssc.201001040⟩
physica status solidi (c), Wiley, 2011, 8 (7-8), pp.2308--2310. ⟨10.1002/pssc.201001040⟩
International audience; InGaN/GaN short‐period superlattices were fabricated using method based on cycle conversion of surface InGaN layer to GaN by applying of growth interruptions in hydrogen atmosphere. SPSLs having total thickness from 12 nm to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddaff859a39cf5a041b9ee53d4aa33b8
https://hal.science/hal-01736040
https://hal.science/hal-01736040
Autor:
M. V. Synitsin, A S Elutin, Stanislav A. Sukharev, Aleksander F. Zapol'skiy, D. V. Konkin, Stanislav M. Kulikov, S. D. Velikanov, V. N. Novikov
Publikováno v:
SPIE Proceedings.
Performance has been investigated of a broadband chemical laser utilizing chain and nonchain reactions and emittingsimultaneously from excited HF and DF molecules. Simultaneous stimulated emission of radiation in the spectral rangesof 2.7-3.0 m and 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd182a65ca1db4a795cf317e31bc2d1c
https://doi.org/10.1117/12.270142
https://doi.org/10.1117/12.270142
Autor:
Yuri N. Frolov, Aleksander F. Zapol'skiy, V P Borisov, S. D. Velikanov, V. V. Shurov, S B Kormer, M. V. Synitsin, Vitali D. Urlin
Publikováno v:
SPIE Proceedings.
A brief review of the investigation results of chemical lasers based on the chain and nonchain reaction of fluorine with hydrogen (deuterium) made in the Russian Federal Nuclear Center (VNIIEF) is presented in this report.© (1996) COPYRIGHT SPIE--Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0e8154186daef01f98504f787fc2247
https://doi.org/10.1117/12.232194
https://doi.org/10.1117/12.232194