Zobrazeno 1 - 10
of 10
pro vyhledávání: '"M. A. Sobolewski"'
Autor:
M. A. Sobolewski, J.-H. Kim
Publikováno v:
Journal of Applied Physics. 132:156102
The rf-bias-induced decreases in plasma electron density observed by us [J. Appl. Phys. 102, 113302 (2007)] and others [Fox-Lyon et al., J. Vac. Sci. Technol. A 32, 030601 (2014)] are better explained by changes in gas composition, rather than neutra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9cf390dc81c4be352271e9f18512269
https://doi.org/10.1063/5.0109603
https://doi.org/10.1063/5.0109603
Publikováno v:
Communications of the ACM. 39:34-45
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7efd57f1e3eae50437e540b0f97600a9
https://doi.org/10.1145/230798.230802
https://doi.org/10.1145/230798.230802
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:2716-2720
Using x‐ray photoelectron spectroscopy (XPS), we have investigated the effects of oxidation on RbxBa1−xBiO3, the degradation of its surface on exposure to air, and the feasibility of cleaning techniques to reverse this degradation. The sample was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf966b72e45f9664faac390ace33f6b8
https://doi.org/10.1116/1.577231
https://doi.org/10.1116/1.577231
Publikováno v:
AIP Conference Proceedings.
When exposed to air, YBa2Cu3O7−x reacts to form a nonsuperconducting surface layer which degrades the quality of devices formed by subsequent deposition of overlayers. Degradation may also be caused by contamination of the surface during prior proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dacf0e4f901af9400e707bb5cef280e0
https://doi.org/10.1063/1.39042
https://doi.org/10.1063/1.39042
Autor:
C. R. Helms, M. A. Sobolewski
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 6:1358-1362
The composition of silicon nitride films obtained by rapid thermal nitridation of silicon in NH3 at 1000–1250 °C for 10–20 s was analyzed using x‐ray photoelectron spectroscopy (XPS) and Auger spectroscopy. The films were 10–25 A thick. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a53f735d19faa109ca979927aff33e82
https://doi.org/10.1116/1.575702
https://doi.org/10.1116/1.575702
Autor:
A. E. Giddings, W. S. Kim, M. A. Sobolewski, T. M. Mnich, F.W. Sexton, R.E. Anderson, A. Ochoa, T. F. Wrobel, J. L. Jorgensen, T. V. Nordstrom, W. T. Corbett, R.K. Treece
Publikováno v:
IEEE Transactions on Nuclear Science. 30:4235-4239
Preliminary results of radiation testing are reported for parts from the SA3000 family, CMOS versions of the Intel 8085 microprocessor family. Total dose tests of the SA3000 and SA3002 have demonstrated full functionality after 3 × 106 rad (Si). Sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15be300319e4f66f856c9b474d2f7f85
https://doi.org/10.1109/tns.1983.4333114
https://doi.org/10.1109/tns.1983.4333114
Publikováno v:
Physical Review B. 38:13407-13410
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d2e267cc4917eec393319d1b119f618
https://doi.org/10.1103/physrevb.38.13407
https://doi.org/10.1103/physrevb.38.13407
Autor:
M. A. Sobolewski, C. R. Helms
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 3:1300-1304
The Auger electron spectra of thin (3–30 A) thermal films of SiO2 on Si were measured. Xenon ion sputtering was also used to provide depth profiles of these films. A feature in the Si LVV Auger spectrum previously attributed to intermediate oxidati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24ec9de5f54208b42cc30b3eaffe3804
https://doi.org/10.1116/1.573050
https://doi.org/10.1116/1.573050
Autor:
M. A. Sobolewski, C. R. Helms
Publikováno v:
Applied Physics Letters. 54:638-640
Thermally grown silicon nitride layers ≤30 A thick have been investigated as interfacial layers in silicon Schottky barrier structures. Current‐voltage characteristics of these devices show modified barrier heights with near unity ideality factor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8b58db120eb9c3b54c18d428d3e81d3
https://doi.org/10.1063/1.100903
https://doi.org/10.1063/1.100903
Autor:
C. R. Helms, M. A. Sobolewski
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7:971
In this paper we present a complete experimental study and theoretical treatment of the barrier height of metal–silicon nitride–silicon Schottky barrier diodes. This study avoids the ambiguities of previous investigations of metal–insulator sem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a6f4f68b37408fab3b8be171672daf4
https://doi.org/10.1116/1.584589
https://doi.org/10.1116/1.584589