Zobrazeno 1 - 10
of 26
pro vyhledávání: '"M. A. Ruvinskii"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 1, Pp 7-10 (2017)
It was theoretically determined the electrical conductivity, thermopower and thermal conductivity of semiconductor quantum wire conditioned by a random field of Gaussian fluctuations of wire thickness. We present the results for cases nondegenerate a
Externí odkaz:
https://doaj.org/article/a90b74163c30451f93e7556b13cc1724
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 4, Pp 520-526 (2017)
Based on the Fuchs-Sondheimer and Mayer models the influence of mechanisms of surface reflection of electrons on the experimental transport and thermoelectric properties of n-PbTe films on various substrates are substrates are considered. The thickne
Externí odkaz:
https://doaj.org/article/a0fffdf8f08840d38d39eb22a412489e
Publikováno v:
Фізика і хімія твердого тіла, Vol 16, Iss 4, Pp 661-666 (2015)
Based on kinetic Boltzmann equation the boundary problem of calculating the conductivity and Seebeck coefficient for a film with a rectangular cross section is solved. Mirror- diffuse mechanism of reflection of the charge carriers from the surfaces o
Externí odkaz:
https://doaj.org/article/20bb94db52744b0984ef5defee01a33f
Autor:
O. B. Kostyuk, M. A. Ruvinskii
Publikováno v:
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII. 37:1725-1731
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8fc9d1963e9370388f746a6c6604e05
https://doi.org/10.15407/mfint.37.12.1725
https://doi.org/10.15407/mfint.37.12.1725
Publikováno v:
Фізика і хімія твердого тіла, Vol 16, Iss 4, Pp 661-666 (2015)
Based on kinetic Boltzmann equation the boundary problem of calculating the conductivity and Seebeck coefficient for a film with a rectangular cross section is solved. Mirror- diffuse mechanism of reflection of the charge carriers from the surfaces o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d45a3f7a3cce21c188c906aba6aee7a
https://doi.org/10.15330/pcss.16.4.661-666
https://doi.org/10.15330/pcss.16.4.661-666
Publikováno v:
Фізика і хімія твердого тіла, Vol 18, Iss 4 (2018)
Based on the theory of weak localization, taking into account the mechanism of spin-orbit scattering, thepatterns of change in the magnetic conductivity of films PbSnAgTe are considered. The dependences of themagnetoresistance of PbSnAgTe films in ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05c4658dae0a2bc579582a45530865f5
http://journals.pu.if.ua/index.php/pcss/article/view/2390
http://journals.pu.if.ua/index.php/pcss/article/view/2390
Autor:
I. P. Yaremiy, M. A. Ruvinskii, M. L. Mokhnatskyi, Ya. S. Yavorskyy, O.B. Kostyuk, Bogdan Dzundza
Thin polycrystalline films based on PbSnAgTe (LATT) compounds on mica-muscovite substrates are obtained. The dependences of conductivity, mobility of current carriers and specific thermoelectric power on temperature for these condensates are investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5029b39195499cb21060c5076893059
http://essuir.sumdu.edu.ua/handle/123456789/65999
http://essuir.sumdu.edu.ua/handle/123456789/65999
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 1, Pp 7-10 (2017)
The electrical conductivity, thermopower and thermal conductivity of semiconductor quantum wire conditioned by a random field of Gaussian fluctuations of wire thickness are theoretically determined. We present the results for cases nondegenerate and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::11e33ddd3192797d99c245b1e4fd4c42
http://essuir.sumdu.edu.ua/handle/123456789/65757
http://essuir.sumdu.edu.ua/handle/123456789/65757
Publikováno v:
Journal of Nano- and Electronic Physics. 8:02051-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7a42fe95ba61e099c6f09f0ca2d5470
https://doi.org/10.21272/jnep.8(2).02051
https://doi.org/10.21272/jnep.8(2).02051
Autor:
M. A. Ruvinskii, B. M. Ruvinskii
Publikováno v:
Semiconductors. 39:231
Expressions for the relaxation time, electron mobility, and static electrical conductivity along a semiconductor quantum wire are derived in relation to a random field of Gaussian fluctuations in the wire’s thickness. In the case of nondegenerate s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96a7e629eadf4fb857317faea4c99045
https://doi.org/10.1134/1.1864205
https://doi.org/10.1134/1.1864205