Zobrazeno 1 - 9
of 9
pro vyhledávání: '"M. A. Remennyy"'
Autor:
M. A. Remennyy, A. L. Zakgeim, A. A. Lavrov, A. A. Usikova, N. D. Il’inskaya, A. E. Cherniakov, S. A. Karandashev, B. A. Matveev, N. M. Stus
Publikováno v:
Semiconductors. 51:260-266
The spatial distribution of equilibrium and nonequilibrium (including luminescent) IR (infrared) radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures (λmax = 3.4 μm) is measured and analyzed; the structural features of t
Publikováno v:
Journal of Physics: Conference Series. 1695:012077
The results of a study of multilayer p-n heterostructures based on InAsSbx solid solution (0.3 ˂ x ˂0.35), with a long-wavelength photosensitivity boundary of λ0.1 ≈ 9.5 μm at room temperature are presented. The current-voltage and spectral cha
Autor:
A. L. Zakgeim, B. A. Matveev, N. M. Stus, A. Yu. Rybal’chenko, M. A. Remennyy, N. D. Il’inskaya, V. I. Ratushnyi, S. A. Karandashev, Anton E. Chernyakov
Publikováno v:
Semiconductors. 46:690-695
The current-voltage characteristics and temperature dependences of zero-bias dynamic resistance are analyzed for InAsSb photodiodes, with consideration for current crowding near the anode, using experimental data on the intensity distribution of posi
Autor:
N. M. Stus, A. Yu. Rybal’chenko, Nonna V. Zotova, B. A. Matveev, M. A. Remennyy, S. A. Karandashev
Publikováno v:
Semiconductors. 45:543-549
Current-voltage characteristics of surface-irradiated photodiodes based on the InAsSbP/InAs structures are analyzed using experimental data on the distribution of electroluminescence intensity over the diode surface and taking into account thickening
Publikováno v:
Vibrational Spectroscopy. 51:289-293
The cantilever enhanced photoacoustic trace gas detection in the mid-infrared 3–7 μm wavelength range has been combined with light emitting diode (LED) technology. Mid-IR LED output power was modulated by pulse driving current with frequency high
Autor:
A. L. Zakgeim, A. E. Cherniakov, A. A. Usikova, N. M. Stus, N. D. Il’inskaya, B. A. Matveev, M. A. Remennyy, S. A. Karandashev, Yu. M. Zadiranov
Publikováno v:
Photonic and Phononic Crystal Materials and Devices X.
We present L-I, I-V and spectral characteristics at 300 and 77 K of the flip-chip LED arrays based on p-InAsSbP/n- InGaAsSb heterostrucutres with photonic crystal formed onto an outcoupling n + -InAs substrate. We also describe results on IR imaging
Autor:
A. Yu. Rybal’chenko, Nonna V. Zotova, M. A. Remennyy, T. V. L'vova, S. A. Karandashev, N. M. Stus, A. V. Ankudinov, B. A. Matveev
Publikováno v:
Physics and Simulation of Optoelectronic Devices XVIII.
IR imaging (2D radiation mapping) of forward biased point contact LEDs based on p-InAsSbP/n-InAs/n-InAsSbP DHs and p-InAsSbP/n-InAs SHs revealed differences in current crowding effect that was attributed to the properties of isotype n-InAsSbP/n-InAs
Autor:
N. M. Stus, M. A. Remennyy, Nonna V. Zotova, A. E. Cherniakov, B. A. Matveev, A. L. Zakgeim, O. A. Usov, Yu. M. Zadiranov, A. A. Usikova, N. D. Il’inskaya, S. A. Karandashev
Publikováno v:
SPIE Proceedings.
InGaAsSb narrow gap heterostructures with p-InAsSbP claddings grown onto heavily doped n+-InAs substrates have been processed into 70 μm wide square mesas lined in a 1x4 array with individual addressing of elements. We report I-V, L-I characteristic
Publikováno v:
Journal of Applied Physics. 108:014903
The cantilever enhanced photoacoustic trace gas detection technique has been combined with mid-infrared light emitting diodes (LEDs) producing significant negative luminescence at a reverse bias. In contrast to normal positive photoacoustic phenomeno