Zobrazeno 1 - 10
of 51
pro vyhledávání: '"M. A. Remennyi"'
Publikováno v:
Optics and Spectroscopy. 129:1231-1235
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e532545e1612d5328e7eb1714695e9de
https://doi.org/10.1134/s0030400x21090101
https://doi.org/10.1134/s0030400x21090101
Autor:
M. A. Remennyi, G. Yu. Sotnikova, A. A. Kapralov, S. E. Aleksandrov, B. A. Matveev, G. A. Gavrilov
Publikováno v:
Technical Physics. 63:1390-1395
Efficiencies of optical pairs consisting of fast low-noise uncooled immersion LEDs and photodiodes based on InAsSb solid solution are studied. The proposed optical pairs are promising for applications in compact low-voltage sensors of carbon dioxide.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e77b92891971aea94a5b17ea068bcfa7
https://doi.org/10.1134/s1063784218090025
https://doi.org/10.1134/s1063784218090025
Autor:
M. A. Remennyi, N. D. Il’inskaya, N. M. Stus, B. A. Matveev, A. A. Usikova, A. A. Lavrov, S. A. Karandashev
Publikováno v:
Technical Physics. 63:226-229
Research data for photovoltaic, I–V, and C–V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength range 2.6–2.8 μm have been reported. Based on these data and available publications, co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df0edc2ae33d0e7234ea9a45e10ae176
https://doi.org/10.1134/s1063784218020172
https://doi.org/10.1134/s1063784218020172
Autor:
T. C. Lukhmyrina, A. A. Klimov, B A Matveev, A.A. Lavrov, N M Lebedeva, R. E. Kunkov, M A Remennyi
Publikováno v:
Journal of Physics: Conference Series. 1851:012019
The results of a study of multilayer photodiodes based on InAs1- x Sb x solid solutions (0.3 < x λ 0.1 ≈ 11 μm at room temperature are presented. The current-voltage and spectral characteristics of photosensitivity and electroluminescence were an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11f7ec3b94404c5a92ab3c306a672f49
https://doi.org/10.1088/1742-6596/1851/1/012019
https://doi.org/10.1088/1742-6596/1851/1/012019
Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n +-InAs heterostructure
Autor:
M. A. Remennyi, A. A. Lavrov, N. D. Il’inskaya, N. G. Karpukhina, S. A. Karandashev, B. A. Matveev, N. M. Stus, A. A. Usikova
Publikováno v:
Semiconductors. 50:646-651
The results of studies of the current–voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 × 64 linear array based on p-InAsSbP/n-InAsSb/n +-InAs with the n +-InAs-substrate side illuminated and sens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfd1772b67add8d1f26e39b74d75c6d3
https://doi.org/10.1134/s1063782616050122
https://doi.org/10.1134/s1063782616050122
Publikováno v:
Journal of Physics: Conference Series. 1697:012180
Narrow gap heterostructures consisting of two double heterostructures (N-InAsSbP/n-InAs/P-InAsSbP and P-InAsSbP/n-InAs0.9Sb0.1/N-InAsSbP) grown sequentially onto a n+-InAs substrate and further processed into a two-color photodiode with individual se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1de490c145c5f490797851152754151f
https://doi.org/10.1088/1742-6596/1697/1/012180
https://doi.org/10.1088/1742-6596/1697/1/012180
Autor:
N. M. Stus, M. A. Remennyi, S. A. Karandashev, V. I. Ratushnyi, A. Yu. Rybal’chenko, B. A. Matveev
Publikováno v:
Technical Physics. 59:1631-1635
The I–V characteristics of front-surface-illuminated InAsSb(P) photodiodes are simulated in terms of a simple model that takes into account the radial variation of the lateral resistance of a semiconductor layer on the irradiated side. The applicab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43cc71916f6764646b2015edbb2530f4
https://doi.org/10.1134/s1063784214110115
https://doi.org/10.1134/s1063784214110115
Autor:
N. M. Stus, N. D. Il’inskaya, A. A. Lavrov, B. A. Matveev, A. A. Usikova, Pavel N. Brunkov, S. A. Karandashev, M. A. Remennyi
Publikováno v:
Infrared Physics & Technology. 64:62-65
Double heterostructure (DH) photodiodes (PDs) with InAs active layer and back-side illumination have been studied in the 100–300 K temperature range. Temperature dependence of a spectral response was standard for InAs based PDs while saturation cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2303334e3277cb3b938158ce1b5cb2f
https://doi.org/10.1016/j.infrared.2014.01.010
https://doi.org/10.1016/j.infrared.2014.01.010
Autor:
M A Remennyi, A. A. Klimov, A.A. Usikova, S. A. Karandashev, A.A. Lavrov, R. E. Kunkov, B. A. Matveev, T. S. Lukhmyrina
Publikováno v:
Journal of Physics: Conference Series. 1410:012028
N-InAsSbP/InAs/P-InAsSbP double heterostructures have been grown onto n+-InAs substrate and further processed into 2×2 photodiode array containing no n+-InAs. C-V, spectral response as well as mid-IR photoluminescence and electroluminescence in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50f477f0c96ebf5dfeec135364c77c0a
https://doi.org/10.1088/1742-6596/1410/1/012028
https://doi.org/10.1088/1742-6596/1410/1/012028
Autor:
N. D. Il’inskaya, A. S. Petrov, N. M. Latnikova, N. M. Stus, M. A. Remennyi, E. N. Sevost’yanov, B. A. Matveev, A. A. Lavrov, S. A. Karandashev
Publikováno v:
Technical Physics Letters. 39:818-821
Analysis of current-voltage and spectral characteristics of photodiodes based on a single p-InAsSbP/n-InAs heterostructure formed on a heavily doped n +-InAs substrate (n + ∼ 1018 cm−3) is presented. It is shown that, at low temperatures (77 < T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8b17adbb14af9ae8f98935c5a61d472
https://doi.org/10.1134/s1063785013090174
https://doi.org/10.1134/s1063785013090174