Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation

Autor: M. Gonschorek, Jean-François Carlin, M. A. Py, Nicolas Grandjean, Eric Feltin

Publikováno v: International Journal of Microwave and Wireless Technologies. 2:13-20

This paper discusses the determination of key electrical parameters of AlInN/(AlN)/GaN heterostructures from capacitance–voltage (CV) measurements. These heterostructures gained recently importance since they allow for high electron mobility transi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ced6123bc16c53b77e828444032b38c2
https://doi.org/10.1017/s1759078710000176

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Autor: Abdelkader Souifi, M. A. Py, Gérard Guillot, G. Post, B. Georgescu

Publikováno v: Journal of Materials Science: Materials in Electronics. 10:419-423

A detailed study is presented on AlInAs/InGaAs/InP composite channels. These devices combine the advantages of high mobility at low voltages and high electric field operations thanks to the use of a composite channel formed by a thin InGaAs layer and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::01aec57dc6dd0e00cec3beb8a8238f8f
https://doi.org/10.1023/a:1008966011311

Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

Autor: Alois Krost, Francesca Rossi, Erhard Kohn, M. A. Py, Denis Martin, Nicolas Grandjean, Giancarlo Salviati, Jürgen Bläsing, Lorenzo Lugani, Jean-François Carlin, Patrick Herfurth

Publikováno v: Journal of applied physics 113 (2013): 214503-1. doi:10.1063/1.4808260
info:cnr-pdr/source/autori:Lorenzo Lugani1, Jean-Francois Carlin1, Marcel A. Py1, Denis Martin1, Francesca Rossi2, Giancarlo Salviati2, Patrick Herfurth3, Erhard Kohn3, Jurgen Blasing4, Alois Krost4, and Nicolas Grandjean1/titolo:Ultrathin InAlN%2FGaN heterostructures on sapphire for high on%2Foff current ratio high electron mobility transistors/doi:10.1063%2F1.4808260/rivista:Journal of applied physics/anno:2013/pagina_da:214503-1/pagina_a:/intervallo_pagine:214503-1/volume:113
JOURNAL OF APPLIED PHYSICS

We report on InAlN/GaN high electron mobility transistors (HEMTs) grown by metal organic vapor phase epitaxy on sapphire with ultrathin buffers. Two dimensional electron gas (2DEG) exhibiting high mobility (1100 cm(2) /V s) and low sheet resistivity

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5cb9ac7e803eaa9bc363d1246d9c08d
https://publications.cnr.it/doc/253424

Investigation of DX centers in modulation-doped field-effect transistor-type Al0.3Ga0.7As/GaAs heterostructures using a fourier-transform deep level transient spectroscopy system

Autor: Y. Haddab, M. A. Py, H.-J. Bühlmann, Marc Ilegems

Publikováno v: Journal of Electronic Materials. 23:1343-1347

Al0.3Ga0.7As:Si/GaAs modulation-doped field-effect transistor-type heterostructures were grown using two different growth temperatures (500 and 620 degrees C) and three doping modes (delta-doping, pulse-doping, and uniform-doping). Deep level transie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c11f6ddfa90d7ba8cf64b564891f79f2
https://doi.org/10.1007/bf02649900

Extraction of FET parameters at low drain bias by taking into account the dependence of mobility on 2D electron gas concentration

Autor: Z.M. Shi, M. A. Py, Marc Ilegems, Y. Haddab, H.-J. Bühlmann, M. V. Baeta Moreira

Publikováno v: Microelectronic Engineering. 15:577-580

An original method for the extraction of FET parameters at low drain bias is presented. It is based on a simple linear charge-control model and on a power-law dependence (with an exponent k > 0 for GaAs/AlGaAs MODFET's and k < 0 for Si-MOSFET's) of t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4874a17b448686015acb01bc2db05999
https://doi.org/10.1016/0167-9317(91)90288-o