Zobrazeno 1 - 10
of 25
pro vyhledávání: '"M. A. Putyato"'
Autor:
N. N. Rubtsova, A. A. Kovalyov, D. V. Ledovskikh, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 58:579-583
Autor:
N. N. Rubtsova, A. A. Kovalev, D. V. Ledovskikh, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 57:468-475
Publikováno v:
Proceedings of Tomsk State University of Control Systems and Radioelectronics. 24:23-28
The article presents the security analysis of locally stored enduser data, as well as the specifics of working with them in the application called “Signal” based on Android OS. The investigated version 5.3.12 was the most recent one up to the tim
Autor:
S. V. Egorov, E. A. Emelyanov, Alexander V. Kononov, M. A. Putyato, B. R. Semyagin, E. V. Deviatov, N.A. Titova, V. V. Preobrazhenskii
Publikováno v:
JETP Letters. 105:508-513
We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demon
The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined during antimony evaporation in Langmuir desorption mode. It is shown that t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b132c8059b71aa881d7f920ceea1cf6e
Autor:
B. R. Semyagin, A. Kononov, V. A. Kostarev, E. V. Deviatov, M. A. Putyato, V. V. Preobrazhenskii, E. A. Emelyanov
We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of InAs/GaSb spectrum, we study samples with 10 nm, 12 nm, and 14 nm thick InA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92f5c6f522260066d69067d04fa5f5bf
Autor:
V. A. Kostarev, E. A. Emelyanov, V. V. Preobrazhenskii, B. R. Semyagin, S. V. Egorov, Alexander V. Kononov, M. A. Putyato, E. V. Deviatov
We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that different transpo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5070a28bdefb2e0d2200755b13e205cc
Autor:
A. S. Deryabin, Leonid V. Sokolov, M. A. Putyato, Anton K. Gutakovskii, A. P. Vasilenko, Yu. B. Bolkhovityanov
Publikováno v:
Physics of the Solid State. 53:2005-2011
Heterostructures of the “strained Ge film/artificial InGaAs layer/GaAs substrate” type have been grown by molecular beam epitaxy. A specific feature of these structures is that the plastically relaxed (buffer) InGaAs layer has the density of thre
GaSb/InGaAsSb/GaSb SINGLE AND MULTIPLE QUANTUM WELLS: OPTICAL PROPERTIES ENGINEERING AND APPLICATION
Autor:
E. Sorokin, I. T. Sorokina, V. V. Preobrazhenskii, M. M. Putyato, A. A. Kovalyov, N. N. Rubtsova, O. P. Pchelyakov
Publikováno v:
International Journal of Nanoscience. :315-318
MBE growth of GaSb / InGaAsSb / GaSb heterostructures of high crystal quality is performed under continual RHEED control. Transmission spectra of the films forming multiple quantum wells in λ ≈ 2–3 μm region confirm possibility to control optic
Publikováno v:
JETP Letters. 95:534-536
Novel self-assembled quantum dots (QDs) in the GaSb/AlAs heterosystem were obtained and studied by means of transmission electron microscopy, steady-state and transient photoluminescence. A strong inter-mixing of both III and V group materials result