Zobrazeno 1 - 10
of 73
pro vyhledávání: '"M. A. Poisson"'
Autor:
Lajos Tóth, Zsolt József Horváth, M.-A. Poisson, László Dobos, Zsolt Endre Horváth, Attila Tóth, Béla Pécz
Publikováno v:
Vacuum. 100:46-49
In this study we report on the micro-, and nanostructural, morphological and electrical properties of Ti(20 nm)/Cr(120 nm)/Al(50 nm) contacts to n-GaN by electron microscopy, X-ray diffraction and I – V measurements. Tested contacts were annealed a
Autor:
Isabelle Sagnes, M. A. Poisson, Sylvain Delage, L. Le Gratiet, Lei Cao, Frédéric Aniel, Anne-Sophie Grimault-Jacquin
Publikováno v:
Applied Physics A. 109:985-991
We investigate terahertz plasmon-polariton (PP) resonances for hetero-structures (AlGaN/GaN, SiGe/Si/SiGe, AlGaAs/GaAs and InAlN/GaN) with grating coupler in order to find the optimal structure. We show a modeling work devoted to a parametric study (
Autor:
Pierre Ruterana, M. A. Poisson, C. Giesen, Hannes Behmenburg, Arantxa Vilalta-Clemente, Michael Heuken
Publikováno v:
physica status solidi (a). 207:1105-1108
In the investigated InAlN/GaN layers, it is shown that the surface morphology and the crystallinity of the alloy critically depend on the In composition. Atomic force microscopy analysis points out that step flow growth is not easily attained in this
Autor:
Anna Cavallini, Piero Gamarra, Beatrice Fraboni, Daniela Cavalcoli, Albert Minj, Saurabh Pandey, M. A. Poisson
Optically induced electronic transitions in nitride based polar heterostructures have been investigated by absorption and emission spectroscopy. Surface photovoltage (SPV), photocurrent (PC), and photo luminescence spectroscopy have been applied to h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae1df619b76cef0d168e8e0d26e7e093
http://hdl.handle.net/11585/133106
http://hdl.handle.net/11585/133106
Publikováno v:
physica status solidi (b). 216:663-667
Autor:
C. Buj-Dufournet, Erwan Morvan, M. A. Poisson, Matthew Charles, Rene Escoffier, M. Fayolle-Lecocq, A. Torres
Publikováno v:
2012 IEEE International SOI Conference (SOI).
Wide bandgap semiconductors such as GaN have a strong interest for new high voltage applications. For this reason, the scientific community has started to develop high power GaN transistors with a Breakdown Voltage (BV) up to 1800V [1].
Autor:
W. Chikhaoui, Catherine Bru-Chevallier, Christian Dua, Jean-Marie Bluet, N. Sarazin, M.-A. Poisson
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2010, 96 (7), ⟨10.1063/1.3326079⟩
Applied Physics Letters, American Institute of Physics, 2010, 96 (7), ⟨10.1063/1.3326079⟩
In order to assess possible mechanisms of gate reverse-bias leakage current in AlInN/GaN high electron mobility transistors (HEMTs) grown by metalorganic chemical-vapor deposition on SiC substrates, temperature-dependent current-voltage measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87588f19c72ec1da11a6e141224deaab
https://hal.archives-ouvertes.fr/hal-01901750
https://hal.archives-ouvertes.fr/hal-01901750
Autor:
Michael Heuken, M. P. Chauvat, Yadira Arroyo-Rojas Dasilva, C. Giesen, M. A. Poisson, Arantxa Vilalta-Clemente, Magali Morales, Pierre Ruterana
Publikováno v:
Proceedings Gallium Nitride Materials and Devices V
Conference 7602: Photonic West OPTO: Gallium Nitride Materials and Devices V
Conference 7602: Photonic West OPTO: Gallium Nitride Materials and Devices V, Jan 2010, San Francisco, United States. pp.76020K
Conference 7602: Photonic West OPTO: Gallium Nitride Materials and Devices V
Conference 7602: Photonic West OPTO: Gallium Nitride Materials and Devices V, Jan 2010, San Francisco, United States. pp.76020K
International audience; InAlN/GaN layers grown by metalorganic vapor phase epitaxy have been investigated by transmission electron microscopy (TEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). It is shown that the surface morphology an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3977d624d57e2c62f1639050e72daf3
https://hal.archives-ouvertes.fr/hal-00491499
https://hal.archives-ouvertes.fr/hal-00491499
Publikováno v:
Revue de chirurgie orthopedique et reparatrice de l'appareil moteur. 93(2)
The Constant-Murley scapular score is currently considered to be the gold standard for shoulder assessment in Europe. Few studies have examined the metrological qualities of this score. Our aim was to study the reliability and validity of the French