Zobrazeno 1 - 10
of 97
pro vyhledávání: '"M. A. Panov"'
Autor:
I. V. Zhukov, A. S. Kiryutin, M. S. Panov, N. N. Fishman, O. B. Morozova, N. N. Lukzen, K. L. Ivanov, H.-M. Vieth, R. Z. Sagdeev, A. V. Yurkovskaya
Publikováno v:
Magnetic Resonance, Vol 2, Pp 139-148 (2021)
Flavin adenine dinucleotide (FAD) is an important cofactor in many light-sensitive enzymes. The role of the adenine moiety of FAD in light-induced electron transfer was obscured, because it involves an adenine radical, which is short-lived with a wea
Externí odkaz:
https://doaj.org/article/49c61de5aca54b4f94d0fa4dcf11e504
Publikováno v:
Semiconductors. 56:455-461
Autor:
M. A. Panov
Publikováno v:
Bulletin of Chelyabinsk State University. :94-105
Publikováno v:
Russian Chemical Bulletin. 70:2375-2381
Publikováno v:
Russian Journal of Building Construction and Architecture. :36-43
Statement of the problem. Choosing the best option for the route of the thermal network at the initial stage of design is a complex multifactorial task, in addition, due to the lack of a number of necessary design calculations, its solution is accomp
Autor:
M. F. Panov, M. V. Pavlova
Publikováno v:
Technical Physics. 66:779-783
Publikováno v:
Russian Journal of Building Construction and Architecture. :14-20
Statement of the problem. Ventilation processes have a significant impact on the spread of airborne infections. It is necessary to use air exchange to reduce the likelihood of spreading such infections. Mathematical model. Using the Wells - Riley mod
Publikováno v:
Technical Physics. 65:1930-1935
We have measured the cross sections of elementary processes occurring during collisions of impinging 3He2+ particles with kinetic energies in the range 1–100 keV with Xe atoms, which are accompanied with the formation of free electrons and ions in
Autor:
D. D. Avrov, S. A. Kukushkin, A. O. Lebedev, M. F. Panov, V. V. Luchinin, A. V. Osipov, A. N. Gorlyak, A. V. Markov
Publikováno v:
Technical Physics Letters. 46:968-971
A model is suggested for a quantitative analysis of the dependence of the dielectric function of hexagonal silicon carbide polytypes on photon energy in the range of 0.7–6.5 eV. The model, which is the sum of two Tauc–Lorentz oscillators (main an
Autor:
A. O. Lebedev, V. V. Luchinin, A. N. Gorlyak, A. S. Grashchenko, M. F. Panov, S. A. Kukushkin, A. V. Osipov, A. V. Markov
Publikováno v:
Technical Physics Letters. 46:763-766
The results of hardness and Young’s modulus study of near-surface layers of 4H-SiC hexagonal silicon carbide obtained by the modified Lely method from the C-face (000 $$\bar {1}$$ ) and Si-face (0001) at shallow depths of the indenter are presented